MC74VHC125 Datasheet PDF - ON Semiconductor

www.Datasheet-PDF.com

MC74VHC125
ON Semiconductor

Part Number MC74VHC125
Description Quad Bus Buffer
Page 8 Pages


MC74VHC125 datasheet pdf
View PDF for PC
MC74VHC125 pdf
View PDF for Mobile


No Preview Available !

MC74VHC125
Quad Bus Buffer
with 3−State Control Inputs
The MC74VHC125 is a high speed CMOS quad bus buffer
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The MC74VHC125 requires the 3−state control input (OE) to be set
High to place the output into the high impedance state.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7 V, allowing the interface of 5 V
systems to 3 V systems.
Features
High Speed: tPD = 3.8ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: Human Body Model; > 2000 V,
Machine Model; > 200 V
Chip Complexity: 72 FETs or 18 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
LOGIC DIAGRAM
Active−Low Output Enables
A1 2
OE1 1
3
Y1
5
A2
OE2 4
6
Y2
9
A3
OE3 10
12
A4
OE4 13
8 Y3
11
Y4
FUNCTION TABLE
VHC125
Inputs Output
A OE Y
HL
LL
XH
H
L
Z
www.onsemi.com
14−LEAD SOIC
D SUFFIX
CASE 751A
14−LEAD TSSOP
DT SUFFIX
CASE 948G
PIN CONNECTION AND
MARKING DIAGRAM
(Top View)
OE1 1
A1 2
Y1 3
OE2 4
A2 5
Y2 6
GND 7
14 VCC
13 OE4
12 A4
11 Y4
10 OE3
9 A3
8 Y3
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 6 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2017 − Rev. 8
1
Publication Order Number:
MC74VHC125/D



No Preview Available !

MC74VHC125
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DC Supply Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin DC Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout DC Output Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIIK Input Diode Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOK Output Diode Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIout DC Output Current, per Pin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC DC Supply Current, VCC and GND Pins
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD Power Dissipation in Still Air, SOIC Packages†
TSSOP Package†
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg StorageTemperature
Value
–0.5 to +7.0
–0.5 to +7.0
–0.5 to VCC +0.5
− 20
$ 20
$ 25
$ 50
500
450
–65 to +150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any
of these limits are exceeded, device functionality should not be assumed, damage may occur
and reliability may be affected.
†Derating − SOIC Packages: – 7 mW/°C from 65° to 125°C
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
This device contains protection
circuitry to guard against damage
due to high static voltages or elec-
tric fields. However, precautions
must be taken to avoid applications
of any voltage higher than maxim-
um rated voltages to this high−im-
pedance circuit. For proper opera-
tion, Vin and Vout should be con-
strained to the range GND v (Vin
or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC). Un-
used outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DCSupplyVoltage
2.0 5.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin DCInputVoltage
0 5.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout DCOutputVoltage
0
VCC
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA Operating Temperature, All Package Types
−55
+125
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtr,tf InputRiseandFallTime
VCC = 3.3 V $0.3 V
VCC =5.0 V $0.5 V
0 100 ns/V
0 20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFunctional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ORDERING INFORMATION
Device
MC74VHC125DG
Package
SOIC−14
(Pb−Free)
Shipping
55 Units / Rail
NLV74VHC125DG*
SOIC−14
(Pb−Free)
55 Units / Rail
MC74VHC125DR2G
SOIC−14
(Pb−Free)
2500 / Tape & Reel
NLV74VHC125DR2G*
SOIC−14
(Pb−Free)
2500 / Tape & Reel
MC74VHC125DTR2G
TSSOP−14
(Pb−Free)
2500 / Tape & Reel
NLV74VHC125DTR2G*
TSSOP−14
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
www.onsemi.com
2



No Preview Available !

MC74VHC125
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
TA = 25°C
TA 85°C
TA 125°C
(V) Min Typ Max Min Max Min Max Unit
VIH Minimum High−Level
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5 1.5
2.1 2.1
3.15 3.15
3.85 3.85
V
VIL Maximum Low−Level
Input Voltage
2.0 0.5 0.5 0.5 V
3.0 0.9 0.9 0.9
4.5 1.35 1.35 1.35
5.5 1.65 1.65 1.65
VOH Minimum High−Level
Output Voltage
VIN = VIH or VIL
VOL Maximum Low−Level
Output Voltage
VIN = VIH or VIL
IOZ Maximum 3−State
Leakage Current
IIN Maximum Input
Leakage Current
VIN = VIH or VIL
IOH = −50 mA
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
VIN = VIH or VIL
VOUT = VCC or GND
VIN = 5.5V or GND
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
0 to
5.5
1.9
2.9
4.4
2.58
3.94
2.0 1.9 1.9
3.0 2.9 2.9
4.5 4.4 4.4
V
2.48 2.34
3.80 3.66
V
0.0 0.1 0.1 0.1 V
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
V
0.36 0.44 0.52
0.36 0.44 0.52
$0.2
5
$2.5
$2.5 mA
$0.1
$1.0
$1.0 mA
ICC Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
4.0 40 40 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3



No Preview Available !

MC74VHC125
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Test Conditions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHL
Maximum Propagation Delay,
A to Y
VCC = 3.3 $ 0.3V CL = 15 pF
CL = 50 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC=5.0$0.5V CL=15pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCL = 50 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPZL,
tPZH
Maximum Output Enable TIme, VCC = 3.3 $ 0.3V CL = 15 pF
OE to Y
RL = 1 kW
CL = 50 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC=5.0$0.5V CL=15pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRL = 1 kW
CL = 50 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHZ
Maximum Output Disable Time, VCC = 3.3 $ 0.3V CL = 50 pF
OE to Y
RL = 1 kW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC=5.0$0.5V CL=50pF
RL = 1 kW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtOSLH, Output−to−Output Skew
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtOSHL
VCC = 3.3 $ 0.3V CL = 50 pF
(Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC=5.0$0.5V CL=50pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCin Maximum Input Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCout Maximum Three−State Output
Capacitance (Output in High
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎImpedance State)
TA = 25°C
Min Typ Max
5.6 8.0
8.1 11.5
3.8 5.5
5.3 7.5
5.4 8.0
7.9 11.5
3.6 5.1
5.1 7.1
9.5 13.2
6.1 8.8
1.5
1.0
4 10
6
TA = 85°C
Min Max
1.0 9.5
1.0 13.0
1.0 6.5
1.0 8.5
1.0 9.5
1.0 13.0
1.0 6.0
1.0 8.0
1.0 15.0
1.0 10.0
1.5
1.0
10
TA =
125°C
Min Max Unit
1.0 12.0 ns
1.0 16.0
1.0 8.5
1.0 10.5
1.0 11.5 ns
1.0 15.0
1.0 7.5
1.0 9.5
1.0 18.0 ns
1.0 12.0
1.5 ns
1.0
10 pF
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 2)
14 pF
1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 4 (per buffer). CPD is used to determine the
no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
Symbol
Characteristic
VOLP Quiet Output Maximum Dynamic VOL
VOLV Quiet Output Minimum Dynamic VOL
VIHD Minimum High Level Dynamic Input Voltage
VILD Maximum Low Level Dynamic Input Voltage
Typ
0.3
−0.3
TA = 25°C
Max
0.8
−0.8
3.5
1.5
Unit
V
V
V
V
www.onsemi.com
4



MC74VHC125 datasheet pdf
Download PDF
MC74VHC125 pdf
View PDF for Mobile


Related : Start with MC74VHC12 Part Numbers by
MC74VHC125 Quad Bus Buffer MC74VHC125
ON Semiconductor
MC74VHC125 pdf
MC74VHC126 Quad Bus Buffer MC74VHC126
ON Semiconductor
MC74VHC126 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact