MC74VHC08 Datasheet PDF - ON Semiconductor

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MC74VHC08
ON Semiconductor

Part Number MC74VHC08
Description Quad 2-Input AND Gate
Page 6 Pages


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MC74VHC08
Quad 2−Input AND Gate
The MC74VHC08 is an advanced high speed CMOS 2−input AND
gate fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
High Speed: tPD = 4.3 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
Chip Complexity: 24 FETs or 6 Equivalent Gates
Pb−Free Packages are Available*
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A1 1
2
B1
A2 4
5
B2
9
A3
10
B3
A4 12
13
B4
3
Y1
6
Y2
Y = AB
8 Y3
11
Y4
Figure 1. Logic Diagram
VCC B4 A4 Y4 B3 A3 Y3
14 13 12 11 10 9 8
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MARKING
DIAGRAMS
14
SOIC−14
D SUFFIX
CASE 751A
1
VHC08G
AWLYWW
TSSOP
DT SUFFIX
CASE 948G
14
VHC
08
ALYW G
G
1
14
SOEIAJ−14
M SUFFIX
CASE 965
74VHC08
ALYWG
1
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
FUNCTION TABLE
Inputs
Output
AB
Y
LL
LH
HL
HH
L
L
L
H
1234567
A1 B1 Y1 A2 B2 Y2 GND
(Top View)
Figure 2. Pinout: 14−Lead Packages
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 6
1
Publication Order Number:
MC74VHC08/D



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MC74VHC08
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC
Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIIK
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOK
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD
Parameter
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air,
SOIC Packages
TSSOP Package
Value
–0.5 to +7.0
–0.5 to +7.0
–0.5 to VCC +0.5
−20
±20
±25
±50
500
450
Unit
V
V
V
mA
mA
mA
mA
mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg Storage Temperature
–65 to +150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DC Supply Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin DC Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout DC Output Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA Operating Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtr, tf Input Rise and Fall Time
VCC = 3.3 V ±0.3 V
VCC = 5.0 V ±0.5 V
Min
2.0
0
0
−40
0
0
Max
5.5
5.5
VCC
+85
100
20
Unit
V
V
V
_C
ns/V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIH
Parameter
Minimum High−Level
Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIL Maximum Low−Level
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOH Minimum High−Level
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Voltage
Test Conditions
Vin = VIH or VIL
IOH = −50 mA
VCC
V
2.0
3.0 to 5.5
2.0
3.0 to 5.5
2.0
3.0
4.5
TA = 25°C
Min Typ Max
1.50
VCC x 0.7
0.50
VCC x 0.3
1.9 2.0
2.9 3.0
4.4 4.5
TA = − 40 to 85°C
Min Max
1.50
VCC x 0.7
0.50
VCC x 0.3
1.9
2.9
4.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOL MaximumLow−Level
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Voltage
Vin = VIH or VIL
IOH = −4.0 mA
IOH = −8.0 mA
Vin = VIH or VIL
IOL = 50 mA
3.0
4.5
2.0
3.0
4.5
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
2.48
3.80
0.1
0.1
0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin = VIH or VIL
IOL = 4.0 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOL = 8.0 mA
3.0
4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIin Maximum Input Leakage Vin = 5.5 V or GND
Current
0 to 5.5
0.36
0.36
± 0.1
0.44
0.44
± 1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC Maximum Quiescent
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSupply Current
Vin = VCC or GND
5.5
2.0 20.0
Unit
V
V
V
V
mA
mA
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MC74VHC08
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHL
Parameter
Maximum Propagation Delay,
A or B to Y
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCin MaximumInputCapacitance
Test Conditions
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
TA = 25°C
Min Typ Max
6.2 8.8
8.7 12.3
4.3 5.9
5.8 7.9
4 10
TA = − 40 to 85°C
Min Max
1.0 10.5
1.0 14.0
1.0 7.0
1.0 9.0
10
Unit
ns
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 1)
18 pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 4 (per gate). CPD is used to determine the
no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
Symbol
VOLP
VOLV
VIHD
VILD
Characteristic
Quiet Output Maximum Dynamic VOL
Quiet Output Minimum Dynamic VOL
Minimum High Level Dynamic Input Voltage
Maximum Low Level Dynamic Input Voltage
TA = 25°C
Typ Max
0.3 0.8
−0.3
−0.8
3.5
1.5
Unit
V
V
V
V
A or B
50%
tPLH
VCC
GND
tPHL
Y 50% VCC
Figure 3. Switching Waveforms
DEVICE
UNDER
TEST
TEST
POINT
OUTPUT
CL*
*Includes all probe and jig capacitance
Figure 4. Test Circuit
INPUT
Figure 5. Input Equivalent Circuit
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MC74VHC08
ORDERING INFORMATION
Device
MC74VHC08DR2
Package
SOIC−14
Shipping
2500 Units / Tape & Reel
MC74VHC08DR2G
SOIC−14
(Pb−Free)
2500 Units / Tape & Reel
MC74VHC08DTR2
TSSOP−14*
2500 Units / Tape & Reel
MC74VHC08DTR2G
TSSOP−14*
2500 Units / Tape & Reel
MC74VHC08MEL
SOEIAJ−14
2000 Units / Tape & Reel
MC74VHC08MELG
SOEIAJ−14
(Pb−Free)
2000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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