MC3488A Datasheet PDF - ON Semiconductor

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MC3488A
ON Semiconductor

Part Number MC3488A
Description Dual EIA-423/EIA-232D Line Driver
Page 6 Pages


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MC3488A
Dual EIA−423/EIA−232D
Line Driver
The MC3488A dual is single−ended line driver has been designed to
satisfy the requirements of EIA standards EIA−423 and EIA−232D, as
well as CCITT X.26, X.28 and Federal Standard FIDS1030. It is
suitable for use where signal wave shaping is desired and the output
load resistance is greater than 450 W. Output slew rates are adjustable
from 1.0 ms to 100 ms by a single external resistor. Output level and
slew rate are insensitive to power supply variations. Input undershoot
diodes limit transients below ground and output current limiting is
provided in both output states.
The MC3488A has a standard 1.5 V input logic threshold for TTL or
NMOS compatibility.
Features
PNP Buffered Inputs to Minimize Input Loading
Short Circuit Protection
Adjustable Slew Rate Limiting
MC3488A Equivalent to 9636A
Output Levels and Slew Rates are Insensitive to Power
Supply Voltages
No External Blocking Diode Required for VEE Supply
Second Source mA9636A
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Pb−Free Packages are Available
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MARKING
DIAGRAMS
8
SOIC−8
3488A
D SUFFIX
ALYW
1 CASE 751
G
1
8
PDIP−8
P1 SUFFIX
CASE 626
MC3488AP1
AWL
YYWWG
11
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Wave
Shape
1
Input A 2
Input B 3
GND 4
8 VCC
7 Output A
6 Output B
5 VEE
Wave Shape Control
TTL Logic
MC3488A Driver
RS−423 Interface
Figure 1. Simplified Application
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 5
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
MC3486
Three−State Receiver
Publication Order Number:
MC3488A/D



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MC3488A
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Power Supply Voltages
VCC + 15 V
VEE − 15
Output Current
Source
Sink
IO +
IO −
+ 150
− 150
mA
Operating Ambient Temperature
TA
0 to + 70
°C
Junction Temperature Range
TJ 150 °C
Storage Temperature Range
Tstg
− 65 to + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Devices should not be operated at these values. The IElectrical CharacteristicsI provide conditions for actual device operation.
RECOMMENDED OPERATING CONDITIONS
Characteristic
Power Supply Voltages
Operating Temperature Range
Wave Shaping Resistor
Symbol
VCC
VEE
TA
RWS
Min Typ Max
10.8 12 13.2
− 13.2 − 12 − 10.8
0 25 70
10 − 1000
Unit
V
°C
kW
TARGET ELECTRICAL CHARACTERISTICS (Unless otherwise noted, specifications apply over recommended operating conditions)
Characteristic
Symbol
Min Typ Max
Unit
Input Voltage − Low Logic State
Input Voltage − High Logic State
Input Current − Low Logic State (VIL = 0.4 V)
Input Current − High Logic State
(VIH = 2.4 V)
(VIH = 5.5 V)
Input Clamp Diode Voltage (IIK = − 15 mA)
Output Voltage − Low Logic State
(RL = ), EIA−423
(RL= 3.0 kW), EIA−232D
(RL= 450 W), EIA−423
Output Voltage − High Logic State
(RL = ), EIA−423
(RL.= 3.0 kW), EIA−232D
(RL = 450 W), EIA−423
Output Resistance (RL q 450 W)
Output Short−Circuit Current (Note 2)
(Vin = Vout = 0 V)
(Vin = VIH(Min), Vout = 0 V)
Output Leakage Current (Note 3) (VCC = VEE = 0 V, − 6.0 V p Vo p 6.0 V)
Power Supply Currents (RW = 100 kW, RL = , VIL p Vin p VIH)
2. One output shorted at a time.
3. No VEE diode required.
VIL
VIH
IIL
IIH1
IIH2
VIK
VOL
VOH
RO
IOSH
IOSL
Iox
ICC
IEE
− − 0.8 V
2.0 −
V
− 80 − − mA
mA
− − 10
− − 100
− 1.5
V
− 6.0 − − 5.0
− 6.0 − − 5.0
− 6.0 − − 4.0
V
5.0 − 6.0
5.0 − 6.0
4.0 − 6.0
V
− 25 50
W
mA
− 150
− 15
+ 15
− + 150
− 100
100
mA
− − + 18 mA
− 18 −
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MC3488A
TRANSITION TIMES (Unless otherwise noted, CL = 30 pF, f = 1.0 kHz, VCC = − VEE = 12.0 V ± 10%, TA = 25°C, RL = 450 W.
Transition times measured 10% to 90% and 90% to 10%)
Characteristic
Symbol
Min Typ Max
Transition Time, Low−to−High State Output
Transition Time, High−to−Low State Output
(RW = 10 kW)
(RW = 100 kW)
(RW = 500 kW)
(RW = 1000 kW)
(RW = 10 kW)
(RW = 100 kW)
(RW = 500 kW)
(RW = 1000 kW)
tTLH
tTHL
0.8
8.0
40
80
0.8
8.0
40
80
1.4
14
70
140
1.4
14
70
140
Unit
ms
ms
ORDERING INFORMATION
Device
Operating Temperature Range
Package
Shipping
MC3488AD
SOIC−8
98 Units / Rail
MC3488ADG
SOIC−8
(Pb−Free)
98 Units / Rail
MC3488ADR2
MC3488ADR2G
TA = 0 to +70°C
SOIC−8
SOIC−8
(Pb−Free)
1000 / Tape & Reel
1000 / Tape & Reel
MC3488AP1
PDIP−8
50 Units / Rail
MC3488AP1G
PDIP−8
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
To
Scope
(Input)
VCC
To
Scope
(Output)
Pulse
Generator
f = 1.0 kHz
PW = 500 ms
3.0 V
Input
MC3488A
50
RWS
VEE
RL
CL
(Includes
Probe and Jig
Capacitance)
Note: Input Rise
and Fall Times
(10% to 90%) p 10 ns
0V
VOH
0V
Output
VOL
90% 90%
10% 10%
tTHL tTLH
Figure 2. Test Circuit and Waveforms for Transition Times
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MC3488A
1000
100
CL = 30 pF
10
1.0
0.1
1.0 10 100
TRANSITION TIMES, tTLH/tTHL (ms)
1000
Figure 3. Output Transition Times versus
Wave Shape Resistor Value
6.0
4.0
2.0
0
− 2.0
− 4.0
− 6.0
0
0°C
TA = 25°C
70°C
VCC = 12 V
VEE = −12 V
RWS = 100 kW
RL = 450 W
1.0
Vin, INPUT VOLTAGE (V)
Figure 4. Input/Output Characteristics
versus Temperature
2.0
Power−On
50
40
30 Vin = VIH(Min)
20
10 TA = 25°C
0
VCC = 12 V
VEE = −12 V
− 10 RWS = 100 kW
− 20
− 30 Vin = 0 V
− 40
− 50
− 10 − 8.0 − 6.0 − 4.0 − 2.0 0 2.0 4.0 6.0 8.0 10
Vout, OUTPUT VOLTAGE (V)
Power−Off
0.10
0.08 VCC = VEE = Vin = 0 V
0.06 TA = 25°C
0.04
(No diode required
at VEE Pin.)
0.02
0
− 0.02
− 0.04
− 0.06
− 0.08
− 0.10
10 − 8.0 − 6.0 − 4.0 − 2.0 0 2.0 4.0 6.0 8.0 10
Vout, OUTPUT VOLTAGE (V)
Figure 5. Output Current versus Output Voltage
12.0
10.0
8.0
6.0
4.0
2.0
0
− 2.0
− 4.0
− 6.0
− 8.0
− 10.0
− 12.0
Vin = 0 V, Vin = VIH
VCC = 12V
VEE = − 12 V
RWS = 100 kW, RL =
Vin = 0 V
Vin = VIH
ICC
IEE
0 10 20 30 40 50 60 70 80 90 100
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Supply Current versus Temperature
100
VCC = 12 V
VEE = − 12 V
CL = 30 pF
TA = 0°C, 70°C
10
TA = 25°C
1
10 k 100 k
1M
RWS, WAVE SHAPING RESISTANCE (W)
Figure 7. Rise/Fall Time versus RWS
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