MBN400GR12AW Datasheet PDF - Hitachi

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MBN400GR12AW
Hitachi

Part Number MBN400GR12AW
Description IGBT Module
Page 4 Pages


MBN400GR12AW datasheet pdf
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IGBT MODULE
MBN400GS12AW
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Weight: 480 (g)
E
E
G
C
TERMINALS
Item
Symbol
Unit
MBN400GS12AW
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
DC
Forward Current
1ms
DC
1ms
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Terminals
Mounting
VCES
VGES
IC
ICp
IF
IFM
Pc
Tj
Tstg
VISO
-
-
V
V
A
A
W
°C
°C
VRMS
N.m
(kgf.cm)
1,200
±20
400
800
400
800
2,000
-40 ~ +150
-40 ~ +125
2,500(AC 1 minute)
1.37(14)/2.94(30)
2.94(30)
(1)
(2)
(3)
Notes:(1)RMS Current of Diode 120Arms max.
(2)Recommended Value 1.18/2.45N.m(12/25kgf.cm)
(3)Recommended Value 2.45N.m(25kgf.cm)
CHARACTERISTICS (Tc=25°C )
Item
Collector Emitter Cut-Off Current
Symbol Unit Min. Typ. Max.
Test Conditions
I CES
mA
-
- 1.0 VCE=1,200V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
- ±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Rise Time
Switching Times Turn On Time
Fall Time
VCE(sat)
VGE(TO)
Cies
tr
ton
tf
V
V
pF
ms
- 2.7 3.4 IC=400A,VGE=15V
- - 10 VCE=5V, IC =400mA
- 37,000 - VCE=10V,VGE=0V,f=1MHz
- 0.25 0.5 VCC=600V
- 0.4 0.7 RL=1.5W
- 0.25 0.35 RG=2.7W
(4)
Turn Off Time
toff
- 0.75 1.1 VGE=±15V
Peak Forward Voltage Drop
VFM V - 2.5 3.5 IF=400A,VGE=0V
Reverse Recovery Time
Thermal Impedance IGBT
FWD
trr
Rth(j-c)
Rth(j-c)
ms
°C/W
-
-
-
- 0.4 IF=400A,VGE=-10V, di/dt=400A/ms
- 0.06
Junction to case
- 0.14
Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
PDE-N400GS12AW-0



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14V
800 VGE=15V 13V12V
Tc=25°C
TYPICAL
600
11V
400
Pc=2000W
10V
200
9V
0
0 2 4 6 8 10
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
10
Tc=25°C
8
TYPICAL
6
4
Ic =800A
Ic =400A
2
0
0 5 10 15 20
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
20
Vcc=600V
Ic =400A
Tc=25°C
15
TYPICAL
14V
VGE=15V 13V12V
800
Tc=125°C
600
TYPICAL
11V
400
10V
200
9V
0
0 2 4 6 8 10
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
10
Tc=125°C
8
TYPICAL
6
4
Ic =800A
Ic =400A
2
0
0 5 10 15 20
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
800
VGE=0
Tc=25°C
Tc=125°C
600
TYPICAL
10 400
5 200
0
0 500 1000 1500 2000 2500 3000
Gate Charge, QG (nc)
Gate charge characteristics
0
012 3 4
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
5
PDE-N400GS12AW-0



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1.5
Vcc=600V
VGE15V
RG=2.7W
TC=25°C
Resistive Load
1.0
TYPICAL
toff
0.5
0
0
tf
tr
ton
100 200 300 400 500
Collector Current, IC (A)
Switching time vs. Collector current
80
Vcc=600V
VGE15V
RG=2.7W
TC=125°C
60 Inductive Load
TYPICAL
Etoff
Eton
40
20
Err
0
0
100 200
300 400 500
Collector Current, IC (A)
Switching loss vs. Collector current
1000
100 VGE15V
RG=2.7W
TC£125°C
10
1
0.1
0
200 400 600 800 1000 1200
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
1400
10
VCC=600V
VGE15V
IC =400A
TC=25°C
Resistive Load
TYPICAL
toff
1
ton
tr
tf
0.1
1
100
10 100
Gate Resistance, RG (W)
Switching time vs. Gate resistance
Etoff
Eton
TYPICAL
Err
10
VCC=600V
VGE15V
IC =400A
TC=125°C
Inductive Load
1
1 10
Gate Resistance, RG (W)
Switching loss vs. Gate resistance
100
1
Diode
0.1
IGBT
0.01
0.001
0.001
0.01
0.1
1
Time, t (s)
Transient thermal impedance
10
PDE-N400GS12AW-0



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HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
„ For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse



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