MBM29BS12DH Datasheet PDF - Fujitsu Media Devices

www.Datasheet-PDF.com

MBM29BS12DH
Fujitsu Media Devices

Part Number MBM29BS12DH
Description (MBM29FS12DH / MBM29BS12DH) BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
Page 30 Pages


MBM29BS12DH datasheet pdf
View PDF for PC
MBM29BS12DH pdf
View PDF for Mobile


No Preview Available !

www.DataSheet4U.com
FUJITSU SEMICONDUCTOR
DATA SHEET
BURST MODE FLASH MEMORY
CMOS
128M (8M × 16) BIT
DS05-20910-2E
MBM29BS/FS12DH 15
s DESCRIPTION
The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as
8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed
in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase
operations. The device can also be programmed in standard EPROM programmers.
(Continued)
s PRODUCT LINE UP
Part No.
Handshaking On/Off
Max Latency (even address in case of
Handshaking) Time (ns)
Synchronous/Burst Max Burst Access Time (ns)
Max OE Access Time (ns)
Max Address Access Time (ns)
Asynchronous
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29BS12DH
Non-Handshaking
71
11
11
50
50
11
MBM29FS12DH
Handshaking
56
11
11
50
50
11
s PACKAGE
80-ball plastic FBGA
(BGA-80P-M04)



No Preview Available !

MBM29BS/FS12DH15
(Continued)
The device provides truly high performance non-volatile memory solution. The device offers fast burst access
frequency of 66 MHz with initial access times of 56 ns at Handshaking mode, allowing operation of high-speed
microprocessors without wait states. To eliminate bus connection the device has separate chip enable (CE),
write enable (WE), address valid (AVD) and output enable (OE) controls. For burst operations, the device
additionally requires Ready (RDY) at Handshaking mode, and Clock (CLK). This implementation allows easy
interface with minimal glue logic to a wide range of microprocessors/ microcontrollers for high performance read
operations.
The burst read mode feature gives system designers flexibility in the interface to the device. The user can preset
the burst length and wrap through the same memory space. At 66 MHz, the device provides a burst access of
11 ns with a latency of 56 ns at 30 pF (Handshaking mode).
The dual operation function provides simultaneous operation by dividing the memory space into four banks. The
device can improve overall system performance by allowing a host system to program or erase in one bank,
then immediately and simultaneously read from another bank, with zero latency. This releases the system from
waiting for the completion of program or erase operations.
The device is command set compatible with JEDEC standard E2PROMs. Commands are written to the command
register using standard microprocessor write timing. Register contents serve as inputs to an internal state-
machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and
data needed for the programming and erase operations. Reading data out of the device is similar to reading
from 5.0 V and 12.0 V Flash or EPROM devices.
The device is programmed by executing the program command sequence. This will invoke the Embedded
Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies
proper cell margins. Typically, each 32K words sector can be programmed and verified in about 0.3 second.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the device automatically times the erase pulse widths and
verifies proper cell margins.
Any individual sector is typically erased and verified in 0.5 second. (If already preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The device is erased when shipped from the factory.
The Enhanced VI/O (VCCQ) feature allows the output voltage generated on the device to be determined based on
the VI/O level. This feature allows this device to operate in the 1.8 V I/O environment, driving and receiving signals
to and from other 1.8 V devices on the same bus.
The device features single 1.8 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. The end of program or erase is
detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6, output pin. Once the end of a program or
erase cycle has been completed, the device internally resets to the read mode.
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simulta-
neously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
2



No Preview Available !

MBM29BS/FS12DH15
s FEATURES
• 0.13 µm process technology
• Single 1.8 V read, program and erase (1.65 V to 1.95 V)
• Simultaneous Read/Write operation (Dual Bank)
• FlexBankTM*1
Bank A: 16 Mbit (4 Kwords × 8 and 32 Kwords × 31)
Bank B: 48 Mbit (32 Kwords × 96)
Bank C: 48 Mbit (32 Kwords × 96)
Bank D: 16 Mbit (4 Kwords × 8 and 32 Kwords × 31)
• Enhanced VI/OTM*2 (VCCQ) Feature
Input/ Output voltage generated on the device is determined based on the VI/O level
• High Performance Burst frequency reach at 66 MHz
Burst access times of 11 ns @ 30 pF at industrial temperature range
Asynchronous random access times of 50 ns (at 30 pF)
Synchronous latency of 56 ns with 1.8 V VCCQ for Handshaking mode
• Programmable Burst Interface
Linear Burst: 8, 16, and 32 words with wrap-around
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Minimum 100,000 program/erase cycles
• Sector Erase Architecture
Eight 4 Kwords, two hundred fifty-four 32 Kwords sectors, eight 4 Kwords sectors.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• HiddenROM region
64 words for factory and 64 words for customer of HiddenROM, accessible through a new “HiddenROM Enable”
command sequence
Factory serialized and protected to provide a sector secure serial number (ESN)
• Write Protect Pin (WP)
At VIL, allows protection of “outermost” 4×4 K words on low, high end or both ends of boot sectors, regardless
of sector protection/unprotection status
• Accelerate Pin (ACC)
At VACC, increases program performance. ; all sectors locked when ACC = VIL
• Embedded EraseTM*2 Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM*2 Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready Output (RDY)
In Synchronous Mode, indicates the status of the Burst read.
In Asynchronous Mode, indicates the status of the internal program and erase function.
• Automatic sleep mode
When address remain stable, the device automatically switches itself to low power mode
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• In accordance with CFI (Common Flash Interface)
• Hardware reset pin (RESET)
Hardware method to reset the device for reading array data
*1 : FlexBankTM is a trademark of Fujitsu Limited.
*2 : Embedded EraseTM, Embedded ProgramTM and Enhanced VI/OTM are trademarks of Advanced Micro Devices, Inc.
(Continued)
3



No Preview Available !

MBM29BS/FS12DH15
(Continued)
• Sector Protection
Persistent sector protection
Password sector protection
ACC protects all sectors
WP protects the outermost 4 x 4 K words on both ends of boot sectors, regardless of sector protection /
unprotection status.
• Handshaking feature available (MBM29FS12DH)
Provides host system with minimum possible latency by monitoring RDY
• CMOS compatible inputs, CMOS compatible outputs
4



MBM29BS12DH datasheet pdf
Download PDF
MBM29BS12DH pdf
View PDF for Mobile


Related : Start with MBM29BS12D Part Numbers by
MBM29BS12DH (MBM29FS12DH / MBM29BS12DH) BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT MBM29BS12DH
Fujitsu Media Devices
MBM29BS12DH pdf
MBM29BS12DH15 BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT MBM29BS12DH15
Fujitsu Media Devices
MBM29BS12DH15 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact