M63826GP Datasheet PDF - Mitsubishi Electric

www.Datasheet-PDF.com

M63826GP
Mitsubishi Electric

Part Number M63826GP
Description 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
Page 4 Pages


M63826GP datasheet pdf
View PDF for PC
M63826GP pdf
View PDF for Mobile


No Preview Available !

www.DataSheet4U.com
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63826P, M63826FP and M63826GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
M63826P and M63826FP have the same pin connection as
M54526P and M54526FP. (Compatible with M54526P and
M54526FP) More over, the features of M63826P and
M63826FP are equal or superior to those of M54526P and
M54526FP.
FEATURES
q Three package configurations (P, FP and GP)
q Pin connection Compatible with M54526P and M54526FP
q High breakdown voltage (BVCEO 50V)
q High-current driving (IC(max) = 500mA)
q With clamping diodes
q Driving available with PMOS IC output of 8-18V
q Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION
INPUT
IN11
IN22
IN33
IN44
IN55
IN66
IN77
GND 8
16 O1
15 O2
14 O3
13 O4 OUTPUT
12 O5
11 O6
10 O7
9 COM COMMON
16P4(P)
16P2N-A(FP)
Package type 16P2S-A(GP)
CIRCUIT DIAGRAM
INPUT
10.5k
COM
OUTPUT
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63826P, M63826FP and M63826GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 10.5kbetween input transistor bases
and input pins. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin (pin 9). The
output transistor emitters are all connected to the GND pin
(pin 8). The collector current is 500mA maximum. Collector-
emitter supply voltage is 50V maximum.The M63826FP and
M63826GP is enclosed in molded small flat package, en-
abling space-saving design.
7.2k
3k
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000



No Preview Available !

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
Limits
Unit
min typ max
VO Output voltage
0 — 50 V
Collector current Duty Cycle
IC
(Current per 1 cir-
cuit when 7 circuits
P : no more than 8%
FP : no more than 5%
GP : no more than 4%
are coming on si- Duty Cycle
0
— 400
mA
multaneously)
P : no more than 30%
FP : no more than 20%
0
— 200
GP : no more than 15%
VIH “H” input voltage
5 — 25 V
VIL “L” input voltage
0 — 0.5 V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
Test conditions
V (BR) CEO
VCE(sat)
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 100µA
II = 500µA, IC = 350mA
II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
VI = 10V
IF = 350mA
VR = 50V
VCE = 4V, IC = 350mA
Limits
Unit
min typ max
50 —
—V
— 1.2 1.6
1.0 1.3
V
— 0.9 1.1
— 0.9 1.4 mA
1.4 2.0
V
— — 100 µA
1000 2500 — —
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton Turn-on time
toff Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min typ max
— 15 — ns
— 350 — ns
NOTE 1 TEST CIRCUIT
INPUT
Vo
PG
50
Measured device
RL
OPEN
OUTPUT
CL
TIMING DIAGRAM
INPUT
50%
OUTPUT
50%
ton
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50
VP = 8VP-P
(2)Input-output conditions : RL = 25, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
50%
50%
toff
Jan. 2000



No Preview Available !

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
1.5 M63826P
M63826FP
1.0
M63826GP
0.5
0.744
0.520
0.418
0
0 25 50 75 85 100
Ambient temperature Ta (°C)
Duty Cycle-Collector Characteristics
(M63826P)
500 1
400
300
200
•The collector current values
100
represent the current per circuit.
•Repeated frequencyy 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
0 20 40 60 80
2
3
4
5
6
7
100
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63826FP)
500
400 1
300
2
200
•The collector current values
100
represent the current per circuit.
•Repeated frequency 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
0 •Ta = 25°C
0 20 40 60 80
3
4
56
7
100
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
500
II = 500µA
400
300
200
100
Ta = 85°C
Ta = 25°C
Ta = –40°C
0 0 0.5 1.0 1.5 2.0
Output saturation voltage VCE(sat) (V)
Duty Cycle-Collector Characteristics
(M63826P)
500
400
300
200
•The collector current values
100
represent the current per circuit.
•Repeated frequency 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 85°C
0 0 20
40 60
80
1
2
3
4
5
6
7
100
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63826FP)
500
400
300 1
200
2
3
100 •The collector current values
represent the current per circuit.
•Repeated frequency 10Hz
4
576
•The value the circle represents the
0 value of the simultaneously-operated circuit. •Ta = 85°C
0 20 40 60 80 100
Duty cycle (%)
Jan. 2000



No Preview Available !

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63826GP)
500
400
1
300
200
•The collector current values
100
represent the current per circuit.
•Repeated frequency 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
0 •Ta = 25°C
0 20
40 60
80
2
3
4
657
100
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
104
7 VCE = 4V
5 Ta = 85°C
3
2
103
Ta = –40°C
7
5 Ta= 25°C
3
2
102
101
23
5 7 102
23
5 7 103
Collector current IcC (mA)
Input Characteristics
4
3
Ta = –40°C
2
Ta = 25°C
1
Ta = 85°C
0 0 5 10 15 20 25
Input voltage VI (V)
Duty Cycle-Collector Characteristics
(M63826GP)
500
400
300
200
100
•The collector current values
represent the current per circuit.
•Repeated frequency 10Hz
•The value the circle represents the value of
0 the simultaneously-operated circuit. •Ta = 85°C
0 20 40 60 80
Duty cycle (%)
1
2
3
4657
100
Grounded Emitter Transfer Characteristics
500
400
300
200
100
0
0
Ta = 85°C
Ta = 25°C
Ta = –40°C
1 234
Input voltage VI (V)
5
Clamping Diode Characteristics
500
400
300
200
100
Ta = 85°C
Ta = 25°C
Ta = –40°C
0 0 0.5 1.0 1.5 2.0
Forward bias voltage VF (V)
Jan. 2000



M63826GP datasheet pdf
Download PDF
M63826GP pdf
View PDF for Mobile


Related : Start with M63826G Part Numbers by
M63826GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY M63826GP
Mitsubishi Electric
M63826GP pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact