M02N60 Datasheet PDF - Stanson Technology

www.Datasheet-PDF.com

M02N60
Stanson Technology

Part Number M02N60
Description N Channel MOSFET
Page 5 Pages


M02N60 datasheet pdf
Download PDF for PC
M02N60 pdf
View PDF for Mobile


No Preview Available !

N Chwawnw.nDaetlaShMeetO4US.cFomET
2.0A
M02N60
PIN CONFIGURATION
TO-251
TO-252
1.Gate 2.Drain 3.Source
ABSOLUTE MAXIMUM RATINGS
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge
Circurits
IDSS and VDS(on) Specified at Elevated
Temperature
RATING
SYMBOL VALUE UNIT
Drain to Current - Continuous
- Pulsed
ID 2.0 A
IDM 9.0
Gate-to-Source Voltage – Continue
- Non-repetitive
VGS
VGSM
+/-20
+/-40
V
V
Total Power Dissipation
TO-251/252
TO-220
Operating and Storage Temperature Range
PD
TJ, TSTG
60
60
-55 to 150
W
Single Pulse Drain-to-Source Avalanche Energy – Tj = 25
(VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25
Thermal Resistance – Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds
EAS
JA
TL
20 mJ
1.0 /W
62.5
260
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Page 1

M02N60 datasheet pdf
Download PDF for PC
M02N60 pdf
View PDF for Mobile


Related : Start with M02N6 Part Numbers by
M02N60 N Channel MOSFET M02N60
Stanson Technology
M02N60 pdf
M02N60B N Channel MOSFET M02N60B
Stanson Technology
M02N60B pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   NEW   

Since 2010   ::   HOME   ::   Contact