M01N60 Datasheet PDF - ETC

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M01N60
ETC

Part Number M01N60
Description N Channel MOSFET
Page 5 Pages


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N Channel MOSFET
1.0A
PIN CONFIGURATION
TO-251
TO-252
1.Gate 2.Drain 3.Source
M01N60
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge
Circurits
IDSS and VDS(on) Specified at Elevated
Temperature
ABSOLUTE MAXIMUM RATINGS
RATING
SYMBOL VALUE UNIT
Drain to Current - Continuous
- Pulsed
ID 1.0 A
IDM 5.0
Gate-to-Source Voltage – Continue
- Non-repetitive
VGS
VGSM
+/-30
+/-40
V
V
Total Power Dissipation
TO-251/252
PD W
50
Operating and Storage Temperature Range
TJ, TSTG -55 to 150
Single Pulse Drain-to-Source Avalanche Energy – Tj = 25
(VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25
Thermal Resistance – Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds
EAS
JA
TL
20 mJ
1.0 /W
62.5
260
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Page 1

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Related : Start with M01N6 Part Numbers by
M01N60 N Channel MOSFET M01N60
ETC
M01N60 pdf

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