LSJ212 Datasheet PDF - Micross

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LSJ212
Micross

Part Number LSJ212
Description Amplifier
Page 1 Pages


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LSJ212
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J212
The LSJ212 is a n-channel JFET General Purpose
amplifier with low noise and low leakage.
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J212 
The SOT-23 package is well suited for cost sensitive
applications and mass production.
HIGH GAIN  
HIGH INPUT IMPEDANCE 
LOW INPUT CAPACITANCE 
gfs = 7000µmho MIN 
IGSS = 100pA max 
Ciss = 5pF 
(See Packaging Information).
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
LSJ212 Benefits:
ƒ High gain
ƒ Low Leakage
ƒ Low Noise
LSJ212 Applications:
ƒ General Purpose Amplifiers
ƒ UHV / VHF Amplifiers
ƒ Mixers
ƒ Oscillators
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
Derating over temperature 
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage or  Gate to Source Voltage 
55°C to +150°C 
55°C to +135°C 
360mW 
3.27 mW/°C 
10mA 
 ‐25V 
  
LSJ212 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN  TYP.  MAX  UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage  ‐25  ‐‐  ‐‐  V 
VDS = 0V, IG = ‐1µA 
VGS(off) 
Gate to Source Cutoff Voltage 
4  ‐‐  ‐6 
VDS = 15V,  ID = 1nA 
IDSS  Drain to Source Saturation Current (Note 2)  15 
IGSS 
Gate Reverse Current (Note 3) 
‐‐ 
‐‐  40  mA 
‐‐ 
100 
pA 
VDS = 15V, VGS = 0V 
VDS = 0V, VGS = ‐15V 
IG 
Gate Operating Current (Note 3) 
‐‐  ‐10  ‐‐  pA 
VDS = 10V,  ID = 1mA 
rDS(on) 
Drain to Source On Resistance 
‐‐  ‐‐  50  Ω 
IG = 1mA,  VDS = 0V 
      
LSJ212 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
gfs 
Forward Transconductance 
7000 
‐‐ 
Click Togos 
Output Conductance 
‐‐  ‐‐ 
 
MAX 
12000 
200 
Buy 
UNITS 
µmho 
 
CONDITIONS 
VDS = 15V,   VGS = 0V , f = 1kHz 
Ciss 
Input Capacitance 
‐‐  4  ‐‐  pF 
VDS = 15V,   VGS = 0V , f = 1MHz  
Crss 
Reverse Transfer Capacitance 
‐‐  1  ‐‐ 
en 
Equivalent Noise Voltage 
‐‐ 
10 
‐‐  nV/Hz 
VDS = 15V,   VGS = 0V , f = 1kHz 
 
 
    
 
LSJ212 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
  UNITS 
CONDITIONS 
td(on) 
tr 
td(off) 
Turn On Time 
Turn On Rise Time 
Turn Off Time 
2   
2   
ns 
6 
tf 
Turn Off Fall Time 
15 
    
Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ212 serviceability may be impaired.  
Note 2 ‐  Pulse test duration  = 2ms   
Note 3    Approximately dou  bles for ev ery 10°C increase in TA 
    
    
Micross Components Europe
Available Packages:
VDD = 10V 
VGS(H) = 0V 
 
See Switching Circuit 
SOT-23 (Top View)
LSJ212 in SOT-23
LSJ212 in bare die.
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx



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