LS310 Datasheet PDF - Micross


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LS310
Micross

Part Number LS310
Description Ultra Match
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LS310
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS310 is a monolithic pair of NPN transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
FEATURES 
HIGH  GAIN  
TIGHT VBE MATCHING 
HIGH ft 
ABSOLUTE MAXIMUM RATINGS 1 
@ 25°C (unless otherwise noted) 
hFE ≥ 150 @ 10µA1mA 
|VBE1  VBE2 |= 0.2mV TYP. 
250MHz TYP. @ 1mA 
(See Packaging Information).
Maximum Temperatures 
Storage Temperature 
65°C to +200°C 
Operating Junction Temperature 
55°C to +150°C 
LS310 Features:
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
250mW 
ƒ Very high gain
ƒ Tight matching
ƒ Low Output Capacitance
Continuous Power Dissipation (Both sides) 
Linear Derating factor (One side) 
Linear Derating factor (Both sides) 
500mW 
2.3mW/°C 
4.3mW/°C 
Maximum Currents 
Collector Current 
10mA 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN  TYP  MAX  UNITS  CONDITIONS 
|VBE1  VBE2 | 
Base Emitter Voltage Differential 
‐‐  1  3  mV 
IC = 10µA, VCE = 5V 
|(VBE1  VBE2)| / ∆T 
 
|IB1  IB2 | 
Base Emitter Voltage Differential 
Change with Temperature 
Base Current Differential 
‐‐  2  15  µV/°C 
IC = 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
‐‐  ‐‐  ‐‐  nA 
IC = 10µA, VCE = 5V 
|∆ (IB1  IB2)|/°C 
Base Current Differential 
 Change with Temperature 
hFE1 /hFE2 
DC Current Gain Differential 
 
ClickELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
To‐‐  ‐‐ 
‐‐  10 
Buy‐‐  nA/°C 
IC = 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
‐‐  % 
IC = 10µA, VCE = 5V 
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX.  UNITS 
CONDITIONS 
BVCBO 
Collector to Base Voltage 
25  ‐‐  ‐‐  V 
BVCEO 
Collector to Emitter Voltage 
25  ‐‐  ‐‐  V 
BVEBO  EmitterBase Breakdown Voltage  6.2  ‐‐  ‐‐  V 
BVCCO 
Collector to Collector Voltage 
30  ‐‐  ‐‐  V 
 
 
150  ‐‐ 
‐‐ 
 
hFE 
DC Current Gain 
150  ‐‐ 
‐‐ 
 
IC = 10µA, IE = 0 
IC = 10µA, IB = 0 
IE = 10µA, IC = 02 
IC = 10µA, IE = 0 
IC = 10µA, VCE = 5V 
IC = 100µA, VCE = 5V 
150  ‐‐ 
‐‐ 
 
IC = 1mA, VCE = 5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐  ‐‐  0.25  V 
IC = 1mA, IB = 0.1mA 
IEBO 
Emitter Cutoff Current 
‐‐  ‐‐  0.2  nA 
IE = 0, VCB = 3V 
ICBO 
Collector Cutoff Current 
‐‐  ‐‐  0.2  nA 
IE = 0, VCB = 20V 
COBO 
Output Capacitance 
‐‐  ‐‐  2  pF 
IE = 0, VCB = 5V 
CC1C2 
Collector to Collector Capacitance 
‐‐ 
‐‐ 
2  pF 
VCC = 0V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐  0.5  nA 
VCC = ±45V 
fT 
Current Gain Bandwidth Product  200  ‐‐ 
‐‐  MHz 
IC = 1mA, VCE = 5V 
NF 
Narrow Band Noise Figure 
‐‐  ‐‐  3  dB  IC = 100µA,  VCE = 5V, BW=200Hz, RG= 10KΩ,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse basetoemitter voltage must never exceed 6.2 volts; the reverse basetoemitter current must never exceed 10µA. 
 
 
  P-DIP (Top View)
 
Available Packages:
LS310 in P-DIP
LS310 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.




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