LS303 Datasheet PDF - Micross

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LS303
Micross

Part Number LS303
Description Super Beta
Page 1 Pages


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LS303
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS303 is a monolithic pair of high voltage Super-
Beta NPN transistors mounted in a single P-DIP
FEATURES 
HIGH  GAIN  
hFE ≥ 2000 @ 1µA TYP. 
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
LOW OUTPUT CAPACITANCE 
TIGHT VBE MATCHING 
HIGH ft 
ABSOLUTE MAXIMUM RATINGS 1 
@ 25°C (unless otherwise noted) 
COBO ≤ 2.0pF 
|VBE1  VBE2 |= 0.2mV TYP. 
100MHz 
(See Packaging Information).
Maximum Temperatures 
Storage Temperature 
65°C to +200°C 
Operating Junction Temperature 
55°C to +150°C 
LS303 Features:
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
250mW 
ƒ Very high gain
ƒ Tight matching
ƒ Low Output Capacitance
Continuous Power Dissipation (Both sides) 
Linear Derating factor (One side) 
Linear Derating factor (Both sides) 
500mW 
2.3mW/°C 
4.3mW/°C 
Maximum Currents 
Collector Current 
5mA 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN  TYP  MAX  UNITS  CONDITIONS 
|VBE1  VBE2 | 
Base Emitter Voltage Differential 
‐‐  0.2 
1 
mV 
IC = 10µA, VCE = 5V 
|(VBE1  VBE2)| / ∆T  Base Emitter Voltage Differential 
  Change with Temperature 
‐‐  1 
5  µV/°C 
IC = 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
|IB1  IB2 | 
Base Current Differential 
hFE1 /hFE2 
DC Current Gain Differential 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
Click To BuySYMBOL 
CHARACTERISTICS 
MIN. 
‐‐  0.5  1.5 
‐‐  5 
‐‐ 
TYP.  MAX.  UNITS 
nA  IC = 10µA, VCE = 5V 
%  IC = 10µA, VCE = 5V 
CONDITIONS 
BVCBO 
Collector to Base Voltage 
10  ‐‐  ‐‐  V 
IC = 10µA, IE = 0 
BVCEO 
Collector to Emitter Voltage 
10  ‐‐  ‐‐  V 
BVEBO  EmitterBase Breakdown Voltage  6.2  ‐‐  ‐‐  V 
IC = 10µA, IB = 0 
IE = 10µA, IC = 02 
BVCCO 
Collector to Collector Voltage 
100  ‐‐ 
‐‐ 
V 
IC = 10µA, IE = 0 
 
 
‐‐  2000  ‐‐ 
 
IC = 1µA, VCE = 5V 
hFE 
DC Current Gain 
2000 
‐‐ 
‐‐ 
 
IC = 10µA, VCE = 5V 
‐‐  2000  ‐‐ 
 
IC = 500µA, VCE = 5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐  ‐‐  0.5  V 
IC = 1mA, IB = 0.1mA 
IEBO 
Emitter Cutoff Current 
‐‐  ‐‐  0.2  pA 
IC = 0, VEB = 3V 
ICBO 
Collector Cutoff Current 
‐‐  ‐‐  100  pA 
IE = 0, VCB = 5V 
COBO 
Output Capacitance 
‐‐  ‐‐  2  pF 
IE = 0, VEB = 1V 
CC1C2 
Collector to Collector Capacitance 
‐‐ 
‐‐ 
2  pF 
VCC = 0V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐  0.5  nA 
VCC = ±20V 
fT 
Current Gain Bandwidth Product  100  ‐‐ 
‐‐  MHz 
IC = 200µA, VCE = 5V 
NF 
Narrow Band Noise Figure 
‐‐  ‐‐  3  dB  IC = 10µA,  VCE = 3V, BW=200Hz, RG= 10KΩ,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse basetoemitter voltage must never exceed 6.2 volts; the reverse basetoemitter current must never exceed 10µA. 
 
 
  P-DIP (Top View)
 
Available Packages:
LS303 in P-DIP
LS303 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.



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