LL2705 Datasheet PDF - International Rectifier

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LL2705
International Rectifier

Part Number LL2705
Description IRLL2705
Page 9 Pages


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PD- 91380B
l Surface Mount
l Dynamic dv/dt Rating
l Logic-Level Gate Drive
l Fast Switching
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
IRLL2705
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.04
ID = 3.8A
S
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application
S O T -22 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Max.
5.2
3.8
3.0
30
2.1
1.0
8.3
± 16
110
3.8
0.10
7.5
-55 to + 150
Parameter
Typ.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
93
48
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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Max.
120
60
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
1/22/99
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IRLL2705
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.040
VGS = 10V, ID = 3.8A „
––– ––– 0.051 VGS = 5.0V, ID = 3.8A „
––– ––– 0.065
VGS = 4.0V, ID = 1.9A „
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
5.1 ––– ––– S VDS = 25V, ID = 1.9A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– 32 48
ID = 3.8A
––– 3.5 5.3 nC VDS = 44V
––– 9.7 14
VGS = 10V, See Fig. 6 and 9 „
––– 6.2 –––
VDD = 28V
––– 12 ––– ns ID = 3.8A
––– 35 –––
RG = 6.2
––– 22 –––
RD = 7.1Ω, See Fig. 10 „
––– 870 –––
VGS = 0V
––– 220 ––– pF VDS = 25V
––– 92 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 0.91
MOSFET symbol
showing the
A
integral reverse
––– ––– 30
p-n junction diode.
––– ––– 1.3 V TJ = 25°C, IS = 3.8A, VGS = 0V „
––– 58 88 ns TJ = 25°C, IF = 3.8A
––– 140 210 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 15mH
RG = 25, IAS = 3.8A. (See Figure 12)
2
ƒ ISD 3.8A, di/dt 220A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
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100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3 .0 V
1 0 0 VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
IRLL2705
3.0V
20µs PULSE W IDTH
1
TJ = 25 °C
A
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE W IDTH
1
TJ = 15 0°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 2 5 °C
TJ = 1 50 °C
10
2.0
ID = 3.8A
1.5
1.0
VDS = 25V
20µs PULSE W IDTH
1A
3.0 3.5 4.0 4.5 5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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0.5
0.0
-60
VGS = 10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRLL2705
1400
1200
1000
800
600
Ciss
V GS = 0V,
f = 1MHz
C iss = C gs + C gd , Cds S H O R TE D
C rss = C gd
C oss = C ds + C gd
Coss
400
Crss
200
0A
1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 3.8A
16
V DS = 44V
V DS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0A
0 10 20 30 40 50
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 1 50 °C
10
TJ = 25 °C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
10
100µs
1m s
1
10m s
TA = 25°C
TJ = 150°C
S ing le P u lse
0.1
0.1 1 10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area
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