LDTC143TWT1G Datasheet PDF - Leshan Radio Company

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LDTC143TWT1G
Leshan Radio Company

Part Number LDTC143TWT1G
Description Bias Resistor Transistor
Page 3 Pages


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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC143TWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
PD
Tj
Tstg
50
50
5
100
200
150
55 to +150
V
V
mA
mW
°C
°C
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC143TWT1G
H2
4.7 -
3000/Tape & Reel
LDTC143TWT3G
H2
4.7 -
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
3.29
Typ.
250
4.7
250
Max.
0.5
0.5
0.3
600
6.11
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/0.25mA
IC=1mA, VCE=5V
VCE=10V, IE=−5mA, f=100MHz
1/3



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LESHAN RADIO COMPANY, LTD.
LDTC143TWT1G
zElectrical characteristic curves
1k VCE=5V
500
200
100 Ta=100°C
25°C
50 40°C
20
10
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.
collector current
1
lC/lB=20
500m
200m Ta=100°C
100m
25°C
40°C
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/3



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LESHAN RADIO COMPANY, LTD.
LDTC143TWT1G
SC−70 (SOT−323)
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
L
0.9
0.035
0.7
0.028
1.9
0.075
ǒ ǓSCALE 10:1
mm
inches
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
GENERIC
MARKING DIAGRAM
XXM
1
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3/3



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Leshan Radio Company
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