LDTA123JWT1G Datasheet PDF - LRC

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LDTA123JWT1G
LRC

Part Number LDTA123JWT1G
Description Bias Resistor Transistor
Page 3 Pages


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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Symbol
VCC
Input voltage
VIN
Output current
IO
IC(Max.)
Power dissipation
PD
Junction temperature
Tj
Storage temperature
Tstg
Limits
50
12 to +5
100
100
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
LDTA123JWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA123JWT1G
6M
2.2 47
3000/Tape & Reel
LDTA123JWT3G
6M
2.2 47
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
1.1
80
1.54
17
Typ.
0.1
2.2
21
250
Max.
0.5
0.3
3.6
0.5
2.86
26
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−5mA
IO/II=−5mA/0.25mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−10mA
VCE=−10V, IE=5mA, f=100MHz
1/3



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LESHAN RADIO COMPANY, LTD.
LDTA123JWT1G
zElectrical characteristic curves
100
VO=−0.3V
50
20
10
5
Ta=−40°C
2
25°C
100°C
1
500m
200m
100m
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
5m VCC=−5V
2m
1m
500µ
200µ Ta=100°C
100µ
25°C
40°C
50µ
20µ
10µ
5µ
2µ
1µ
0 0.5 1.0 1.5 2.0 2.5 3.0
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100°C
200 25°C
40°C
100
50
VO=−5V
20
10
5
2
1
100µ−200µ −500µ −1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
1
lO/lI=20
500m
Ta=100°C
200m
25°C
40°C
100m
50m
20m
10m
5m
2m
1m
100µ −200µ −500µ −1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
2/3



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LESHAN RADIO COMPANY, LTD.
LDTA123JWT1G
SC−70 (SOT−323)
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
L
0.9
0.035
0.7
0.028
1.9
0.075
ǒ ǓSCALE 10:1
mm
inches
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
GENERIC
MARKING DIAGRAM
XXM
1
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3/3



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