LDTA114TWT3G Datasheet PDF - LRC

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LDTA114TWT3G
LRC

Part Number LDTA114TWT3G
Description Bias Resistor Transistor
Page 3 Pages


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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA114TWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
50
50
5
100
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA114TWT1G
6E
10 - 3000/Tape & Reel
LDTA114TWT3G
6E
10 - 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
7
Typ.
250
10
250
Max.
0.5
0.5
0.3
600
13
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−50V
VEB=−4V
IC/IB=−10mA/1mA
VCE=−5V, IC=−1mA
VCE=−10V, IE=5mA, f=100MHz
1/3



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LESHAN RADIO COMPANY, LTD.
LDTA114TWT1G
zElectrical characteristic curves
1k
VCE=−5V
500
200
100 Ta=100°C
25°C
50 40°C
20
10
5
2
1
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
1
lC/lB=20
500m
200m Ta=100°C
25°C
100m 40°C
50m
20m
10m
5m
2m
1m
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/3



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LESHAN RADIO COMPANY, LTD.
LDTA114TWT1G
SC−70 (SOT−323)
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
L
0.9
0.035
0.7
0.028
1.9
0.075
ǒ ǓSCALE 10:1
mm
inches
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
GENERIC
MARKING DIAGRAM
XXM
1
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3/3



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