LDTA113TWT3G Datasheet PDF - LRC

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LDTA113TWT3G
LRC

Part Number LDTA113TWT3G
Description Bias Resistor Transistor
Page 3 Pages


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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5 to +10
100
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA113TWT1G
91
1
3000/Tape & Reel
LDTA113TWT3G
91
1
10000/Tape & Reel
LDTA113TWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min. Typ. Max. Unit
Conditions
50 − − V IC= 50µA
50 − − V IC= 1mA
5 − − V IE= 50µA
− − 0.5 µA VCB= 50V
− − 0.5 µA VEB= 4V
− −0.3 V IC /IB= 5mA / 0.25mA
100 250 600
IC= 1mA , VCE= 5V
0.7 1 1.3 k
250 MHz VCB= 10V , IE=5mA , f=100MHz
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zElectrical characteristic curves
1k
VCE= −5V
500
200
100
50
Ta=100°C
25°C
40°C
20
10
5
2
1
100µ −200µ −500µ −1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC Current gain
vs. Collector Current
LESHAN RADIO COMPANY, LTD.
LDTA113TWT1G
1m
500m
200m
100m
50m
Ta=100°C
25°C
40°C
IC/IB=20
20m
10m
5m
2m
1m
100µ −200µ
500µ −1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
2/3



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LESHAN RADIO COMPANY, LTD.
LDTA113TWT1G
SC−70 (SOT−323)
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
L
0.9
0.035
0.7
0.028
1.9
0.075
ǒ ǓSCALE 10:1
mm
inches
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
GENERIC
MARKING DIAGRAM
XXM
1
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3/3



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