LBAS70-05LT3G Datasheet PDF - Leshan Radio Company

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LBAS70-05LT3G
Leshan Radio Company

Part Number LBAS70-05LT3G
Description SCHOTTKY BARRIER DIODE
Page 4 Pages


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LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current
High breakdown voltage
Guard ring protected
Low diode capacitance.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes with an integrated guard ring for
stress protection.Single diodes and double diodes with different
pinning are available.
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
LBAS70LT1G
S-LBAS70LT1G
LBAS70LT3G
S-LBAS70LT3G
LBAS70-04LT1G
S-LBAS70-04LT1G
LBAS70-04LT3G
S-LBAS70-04LT3G
LBAS70-05LT1G
S-LBAS70-05LT1G
LBAS70-05LT3G
S-LBAS70-05LT3G
LBAS70-06LT1G
S-LBAS70-06LT1G
LBAS70-06LT3G
S-LBAS70-06LT3G
Marking
BE
BE
CG
CG
EHH
EH
GK
GK
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
LBAS70LT1G
Series
S-LBAS70LT1G
Series
3
1
2
SOT- 23
13
Anode
Cathode
BAS70 single diode.
3
Cathode/Anode
1
Anode
2
Cathode
BAS70-04 double diode.
3
Cathode
1
Anode
2
Anode
BAS70-05 double diode.
3
Anode
1
Cathode
2
Cathode
BAS70-06 double diode.
Rev.O 1/4



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LESHAN RADIO COMPANY, LTD.
LBAS70LT1G Series , S-LBAS70LT1G Series
MAXIMUM RATINGS (TA = 25°C)
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive Peak forward surge current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
Symbol
VR
IF
IFSM
IFSM
Tstg
Tj
Tamb
Min.
-
-
-
-
-65
-
-65
Max.
70
70
70
100
+150
150
+150
Unit
V
mA
mA
mA
°C
°C
°C
Conditions
tp<1s;δ<0.5
tp<10ms
DEVICE MARKING
LBAS70LT1G=BE LBAS70-04LT1G=CG LBAS70-05LT1G=EH LBAS70-06LT1G=GK
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Max.
Unit
Conditions
Forward voltage(Fig.1)
Reverse current(Fig.2 ;note1)
Charge carrier life time
(krakauer method)
VF 410 mV
750 mv
1v
IR 100 nΑ
10 µA
τ 100 ps
IF=1mA
IF=10mA
IF=15mA
VR=50V
VR=70V
IF=5mA
Diode capacitance(Fig.4)
Note:
1. Pulse test:tp=300µs;δ=0.02.
Cd 2 pF f=1MHz;VR=0
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL VALUE
Thermal resistance from junction to ambient
Rth j-a
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
500
UNIT
k/w
CONDITIONS
note1
Rev.O 2/4



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LESHAN RADIO COMPANY, LTD.
LBAS70LT1G Series , S-LBAS70LT1G Series
Electrical characteristic curves(TA = 25°C)
102
10
1
Tamb=85OC
10-1 Tamb=125OC Tamb=25OC
10-20
Tamb=-40OC
0.2 0.4 0.6
0.8 1.0
FORWARD VOLTAGE: VF(V)
Fig.1 Forward current as a function of
forward voltage; typical values.
102
10 Tamb=125OC
1
10-1
Tamb=85OC
10-2
10-3
0
Tamb=25OC
20 40 60 80
FORWARD VOLTAGE: VR(V)
Fig.2 Reverse current as a function of
reverse voltage; typical values.
103
102
10
1
10-1
1
10 102
FORWARD VOLTAGE: IF(mA) f=10KHz
Fig.3 Differential forward resistance as a function
of forward current;typical values.
2
1.5
1
0.5
0
0 20
40 60 80
FORWARD VOLTAGE: VR(V) f=1MHz Tamb=25OC
Fig.4 Diode capacitance as a function of reverse
voltage;typical values.
Rev.O 3/4



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LESHAN RADIO COMPANY, LTD.
LBAS70LT1G Series , S-LBAS70LT1G Series
SOT-23
A
L
3
BS
12
VG
C
D H KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
Rev.O 4/4



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Leshan Radio Company
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