L2SC4081xT1 Datasheet PDF - Leshan Radio Company

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L2SC4081xT1
Leshan Radio Company

Part Number L2SC4081xT1
Description General Purpose Transistors NPN Silicon
Page 5 Pages


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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽLow Cob,Cob=2pF(Typ.).
ƽEpitaxial planar type.
www.DataSheet4U.com ƽPNP complement:L2SA1576A
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SC4081QT1
L2SC4081QT1G
L2SC4081RT1
L2SC4081RT1G
L2SC4081ST1
L2SC4081ST1G
Marking
BQ
BQ
(Pb-Free)
BR
BR
(Pb-Free)
BS
BS
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
T stg
50 V
60 V
7.0 V
150 mAdc
0.2 W
150 °C
-55 ~+150 °C
hFE values are classified as follows:
*Q
R
hFE
120~270
180~390
S
270~560
L2SC4081*T1
3
1
2
SC-70/SOT– 323
1
BASE
3
COLLECTOR
2
EMITTER
L2SC4081*T1–1/5



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LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
www.DataSheet4U.com Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
(V CB = 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
50
7
60
120
L2SC4081*T1
Typ Max Unit
— —V
— —V
— —V
— 0.1 µA
— 0.1 µA
— 0.4 V
–– 560 ––
180 –– MHz
2.0 3.5 pF
L2SC4081*T1-2/5



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Fig.1 Grounded emitter propagation characteristics
50
20
10
50
www.DataSheet4U.com
2
1
0.5
VCE= 6 V
0.2
0.1
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
10
8
6
4
2
0
0 4 8 12 16 20
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.5 DC current gain vs. collector current ( )
500
200
100
50
20
10
0.2
0.5 1
2
5 10 20
50 100 200
I C, COLLECTOR CURRENT (mA)
LESHAN RADIO COMPANY, LTD.
L2SC4081*T1
Fig.2 Grounded emitter output characteristics( )
100
T A = 25°C
0.50mA
80
60
40
20
0
0
0.4 0.8
1.2
1.6 2.0
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.4 DC current gain vs. collector current ( )
500
200
100
50
20
10
0.2
0.5 1
2
5 10 20
50 100 200
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
collector current
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5 10
20
50 100
I , COLLECTOR CURRENT (mA)
C
200
L2SC4081*T1-3/5



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LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
www.DataSheet4U.com
0.1
0.05
L2SC4081*T1
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.1
0.05
0.02 0.02
0.01
0.2
0.5 1
2
5 10
20
50 100
I , COLLECTOR CURRENT (mA)
C
200
0.01
0.2
0.5 1
2
5 10
20
I C, COLLECTOR CURRENT (mA)
50 100
Fig.9 Gain bandwidth product vs. emitter current Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
500
10
200 5
100
50
–0.5
–1 –2
–5 –10 –20
I E, EMITTER CURRENT (mA)
–50 –100
Fig.11 Base-collector time constant vs.emitter current
2
1
0.2 0.5 1 2
5 10 20
50
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
200
100
50
20
10
–0.2
–0.5 –1
–2
I E, EMITTER CURRENT (mA)
–5
–10
L2SC4081*T1-4/5



L2SC4081xT1 datasheet pdf
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L2SC4081xT1 General Purpose Transistors NPN Silicon L2SC4081xT1
Leshan Radio Company
L2SC4081xT1 pdf

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