L2SC3356LT1G Datasheet PDF - Leshan Radio Company

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L2SC3356LT1G
Leshan Radio Company

Part Number L2SC3356LT1G
Description High-Frequency Amplifier Transistor
Page 6 Pages


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DATA SHEET
LESHAN RADIO COMPANY, LTD.
DESCRIPTION
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
L2SC3356LT1G
3
ORDERING INFORMATION
www.DataSheet4U.com
Device
L2SC3356LT1G
L2SC3356LT3G
Marking
R24
R24
Shipping
3000/Tape & Reel
10000/Tape & Reel
FEATURES
• We declare that the material of product compliance with RoHS requirements.
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
1
2
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg 65 to +150
V
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0 A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0 A VEB = 1.0 V, IC = 0
DC Current Gain
hFE 82 170 270
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Cre**
0.55 1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
11.5
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350 s, Duty Cycle  2 %
* The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Driver Marking
L2SC3356LT1G=R24
1/4



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TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
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0 50 100 150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5
1 5 10
IC-Collector Current-mA
50
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
VCE = 10 V
0.1
0 0.5 1.0
5.0 10 30
IC-Collector Current-mA
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1G
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
1
0.5
0.3
0
0.5 1 2
5 10 20 30
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
10
5
VCE = 10 V
f = 1.0 GHz
0
0.5 1
5 10
IC-Collector Current-mA
50 70
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
Gmax
20
|S21e|2
10
VCE = 10 V
IC = 20 mA
0
0.1 0.2 0.4 0.6 0.81.0 2
f-Frequency-GHz
2/4



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LESHAN RADIO COMPANY, LTD.
L2SC3356LT1G
www.DataSheet4U.com
7
6
5
4
3
2
1
NOISE FIGURE vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1.0 GHz
NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
18 5
f = 1.0 GHz
IC = 20 mA
15 4
|S21e|2
12 3
62
31
NF
0
0.5 1
5 10
IC-Collector Current-mA
50 70
0
0 2 4 6 8 10
VCE-Collector to Emitter Voltage-V
3/4



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LESHAN RADIO COMPANY, LTD.
L2SC3356LT1G
www.DataSheet4U.com
V
A
L
3
BS
12
G
C
D
H
K
0.037
0.95
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
J K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
4/4



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L2SC3356LT1G pdf

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