L034 Datasheet PDF - IXYS Corporation

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L034
IXYS Corporation

Part Number L034
Description MegaMOSTMFET Module
Page 4 Pages


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MegaMOSTMFET
Module
N-Channel Enhancement Mode
VMO 380-02 F
1
V
DSS
ID25
RDS(on)
= 200 V
= 385 A
= 4.6 m
Preliminary data
Symbol
V
DSS
VDGR
VGS
VGSM
ID25
I
DM
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 10 k
Continuous
Transient
TK = 25°C
T
K
=
25°C,
t
P
=
10
µs
TC = 25°C
T
K
=
25°C
50/60 Hz
IISOL 1 mA
t = 1 min
t=1s
Mounting torque (M6)
Terminal connection torque (M5)
typical including screws
11
10 2
Maximum Ratings
200 V
200 V
±20 V
±30 V
385
1540
A
A
2230
1505
W
W
-40 ...+150
150
-40 ... +125
°C
°C
°C
3000
3600
V~
V~
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
250 g
2
1
11
10
1 = Drain
10 = Kelvin Source
2 = Source
11 = Gate
Features
q International standard package
q Direct Copper Bonded Al O ceramic
23
base plate
q Isolation voltage 3600 V~
q Low R HDMOSTM process
DS(on)
q Low package inductance for high
speed switching
q Kelvin Source contact for easy drive
Symbol
VDSS
VGS(th)
IGSS
I
DSS
R
DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 12 mA
VDS = 20 V, ID = 120 mA
200
3
VGS = ±20 V DC, VDS = 0
V =V ,
DS DSS
V =0V
GS
T
J
=
25°C
VDS = 0.8 • VDSS, VGS = 0 V TJ = 125°C
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t 300 µs, duty cycle d 2 %
V
6V
±500 nA
2,5 mA
12 mA
4.6 m
Applications
q AC motor speed control for electric
vehicles
q DC servo and robot drives
q Switched-mode and resonant-mode
power supplies
q DC choppers in fork lift trucks
Advantages
q Easy to mount
q Space and weight savings
q High power density
q Low losses
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629



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VMO 380-02 F
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Q
gd
R thJC
R
thJK
Test
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V DS =10V; ID=0.5•ID25 pulsed
VGS =0V, VDS=25V, f=1 MHz
TBD
48
8.8
3.1
S
nF
nF
nF
VGS=10V,
RG = 1
VDS=0.5•VDSS,
(External)
ID=0.5•ID25
VGS=10V, VDS=0.5•VDSS, ID=0.5•ID25
210
500
900
350
2090
385
1045
ns
ns
ns
ns
nC
nC
nC
with 30 µm heat transfer paste
0.056K/W
0.083K/W
Source-Drain Diode
Characteristic Values
Symbol
(TJ = 25°C, unless otherwise specified)
Test Conditions
min. typ. max.
I S VGS =0
385 A
I Repetitive; pulse width limited by T
S M JM
1540 A
V S D IF=IS; VGS=0V,
0.9 1.2 V
Pulse test, t300µs, duty cycle d2%
trr I F = IS, -di/dt = 1200 A/
Dimensions in mm (1 mm = 0.0394")
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025



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VMO 380-02 F
1200
ID A
1000
800
600
400
VGS = 10 V
9V
8V
7V
6V
1200
ID A
1000
VDS = 30 V
800
600
400
200
5V
0
0 1 2 3 4 5V6
VDS
Fig. 1 Typical output characteristics ID = f (VDS)
1.4
RDS(on)
norm1..3
1.2
VGS = 10 V
1.1
VGS = 15 V
1.0
0.9
200
TJ = 125°C
TJ = 25°C
0
0 2 4 6V 8
VGS
Fig. 2 Typical transfer characteristics ID = f (VGS)
2.5
RDS(on)
norm.
2.0
ID = 190 A
1.5
1.0
0.8
0 200 400 600 800 10A00
ID
Fig. 3 Typical RDS(on) = f (ID), normalized
1200
0.5
-50 -25 0 25 50 75 100
TJ
Fig. 4 RDS(on) = f (TJ), normalized
125°C150
450
ID 40A0
350
300
250
200
150
100
50
0
0 25 50 75 100 125 °C 150
TS
Fig. 5 Continuous drain current I = f (T )
DK
1.2
VDSS
V GS(th1) .1
norm.
1.0
VGS(th)
VDSS
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125°C150
TJ
Fig. 6 V = f (T ), V = f (T ), normalized
DSS
J GS(th)
J
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629



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VMO 380-02 F
15
VDS = 100 V
VGS
V ID = 190 A
IG = 11 mA
12
9
10000
ID A
1000
Limited by RDS(on)
TS = 25°C
TJ = 150°C
non-repetitive
t = 1 ms
6
100 t = 10 ms
3
0
0 500 1000 1500 2000 2n5C00 3000
Qg
Fig. 7 Typical turn-on gate charge characteristics
t = 100 ms
10
1 10 100 V 1000
VDS
Fig. 8 Forward Bias Safe Operating Area, ID = f (VDS)
1000
nF
C
100
10
1200
A
1000
IS
800
Ciss
600
Coss
TJ = 125°C
TJ = 25°C
400
Crss
200
1
0 5 10 15 20 V 25
VDS
Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz
1000
Id 900
800
D= 0.1
700 D= 0.2
600
D= 0.3
500 D= 0.4
TK = 80°C
0
0.00 0.25 0.50 0.75 1.00 1.25 V 1.50
VSD
Fig. 10 Typical forward characteristics of reverse
diode, IS = f (VSD)
0.1
K/W
D = 0.5
ZthJK
D= 0.2
0.01 D= 0.1
400
300
D= 0.5
D= 0.7
200
D=0.05
D=0.02
D=0.01
100
D = single pulse
0
0.0001
0.001
0.01
0.1 s 1
tp
Fig. 11 Drain current versus pulse width and
duty cycle
0.001
0.001
0.01
0.1
1s
tp
10
Fig. 12 Transient thermal resistance ZthJK = f (tp)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025



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