KTC3551T Datasheet PDF - Kexin


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KTC3551T
Kexin

Part Number KTC3551T
Description NPN Transistors
Page 4 Pages

KTC3551T datasheet pdf
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SMD Type
Transistors
NPN Transistors
KTC3551T
Features
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
High Allowable Power Dis sipation.
Complementary to KTA1551T.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
80
80
50
5
1
3
0.9
150
-55 to 150
Unit
V
A
W
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SMD Type
Transistors
NPN Transistors
KTC3551T
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= 100 μAIE= 0
VCEO Ic= 1 mAIB= 0
VCES Ic= 100uA, VBE= 0
VEBO IE= 100μAIC= 0
ICBO VCB= 80 V , IE= 0
IEBO VEB= 5V , IC=0
IC=500 mA, IB=10mA
VCE(sat)
IC=300 mA, IB=6mA
VBE(sat) IC= 500 mA, IB= 10mA
hFE VCE= 2V, IC= 100mA
Turn-On Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
ton
tstg
tf
Cob
fT
PW=20 s
DC <= 1%
INPUT
50
VR
IB1
IB2
RB
OUTPUT
RL
100 F
470 F
VBE =-5V
VCC =25V
20IB1=-20IB2=IC =500mA
VCB= 10V, IE=0,f=1MHz
VCE= 10V, IC= 300mA
Min Typ Max Unit
80
50
V
80
5
100
nA
100
190
mV
135
1.2 V
200 560
35
330 ns
40
6 pF
420 MHz
Marking
Marking
HK
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SMD Type
Transistors
NPN Transistors
KTC3551T
Typical Characterisitics
I C - VCE
1K
30mA
40mA
10mA 8mA
800 6mA
4mA
600
2mA
400
200
1K
500
300
100
50
30
0 IB=0mA
0 0.2 0.4 0.6 0.8 1.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
10
0.01
hFE - I C
Ta=75 C
Ta=25 C
Ta=-25 C
VCE =2V
0.03 0.1
0.3
COLLECTOR CURRENT IC (A)
1.0
1
IC /IB=20
0.5
0.3
VCE(sat) - IC
1
IC /IB=50
0.5
0.3
VCE(sat) - I C
0.1
0.05
0.03
0.01
0.01
Ta=75 C
Ta=25 C
Ta=-25 C
0.03 0.1
0.3
COLLECTOR CURRENT IC (A)
VBE(sat) - I C
10
IC /IB=50
5
3
1
1 Ta=-25 C
0.5 Ta=25 C Ta=75 C
0.3
0.1
0.01
0.03 0.1
0.3
COLLECTOR CURRENT IC (A)
1
0.1
0.05 Ta=75 C Ta=-25 C
0.03 Ta=25 C
0.01
0.01
0.03
0.1
0.3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
COLLECTOR CURRENT IC (A)
I C - VBE
VCE =2V
0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE VBE (V)
1
1.2
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SMD Type
Transistors
NPN Transistors
KTC3551T
Typical Characterisitics
5K VCE =10V
3K
fT - IC
1K
500
300
100
50
0.01
0.03 0.1
0.3
COLLECTOR CURRENT IC (A)
1
C ob - VCB
100
f=1MHz
50
30
10
5
3
1
0.1 0.3 1
3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
SAFE OPERATING AREA
5
3 IC MAX.(PULSED)
1 IC MAX
0.5 (CONTINUOUS)
0.3
1mS*
0.1 * SINGLE NONREPETITIVE
0.05
PULSE Ta=25 C
CURVES MUST BE DERATED
0.03 LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
(600mm2 0.8mm)
0.01
0.1 0.3
1
3 10
.
30
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
Pc - Ta
1.2
MOUNTED ON A
1.0 CERAMIC BOARD
(600mm2 0.8mm)
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
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