KDS4501H Datasheet PDF - Kexin

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KDS4501H
Kexin

Part Number KDS4501H
Description Complementary PowerTrench Half-Bridge MOSFET
Page 3 Pages


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SMD Type
TransistIoCrs
Complementary PowerTrench Half-Bridge MOSFET
KDS4501H
Features
N-Channel
9.3 A, 30 V RDS(ON) = 18m @ VGS = 10 V
RDS(ON) = 23m @ VGS =4.5V
P-Channel
-5.6 A, -20 V RDS(ON) = 46 m @ VGS =- 4.5 V
RDS(ON) = 63 m @ VGS =-2.5V
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JA
R JC
N-Channel
P- Channel
30 -20
20 8
9.3 -5.6
20 -20
2.5
1.2
1
-55 to 150
50
25
Unit
V
V
A
A
W
/W
/W
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SMD Type
TransistIoCrs
KDS4501H
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
RDS(on)
ID(on)
gFS
Testconditons
VGS = 0 V, ID = 250 A
VGS = 0 V, ID = -250 A
ID = 250 A, Referenced to 25
ID = -250 A, Referenced to 25
VDS = 24V, VGS = 0 V
VDS = -16 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = 8 V, VDS = 0 V
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
ID = 250 A, Referenced to 25
ID = -250 A, Referenced to 25
VGS = 10 V, ID =9.3A
VGS = 10 V, ID = 9.3 A,TJ = 125
VGS = 4.5 V, ID =7.6 A
VGS = -4.5 V, ID =-5.6 A
VGS = -4.5 V, ID =-5.6 A,TJ = 125
VGS = -2.5 V, ID =-5.0A
VGS = 10 V, VDS = 5V
VGS = -4.5 V, VDS = -5V
VDS = 5V, ID = 9.3A
VDS = 5V, ID = -5.6A
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Coss
Crss
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
td(on)
tr
N-Channel
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
(Note 2)
td(off)
tf
P-Channel
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6
(Note 2)
Qg N-Channel
VDS =15V,ID=9.3A,VGS=4.5V(Note 2)
Qgs
P-Channel
VDS=-15V,ID=-2.4A,VGS=-4.5V(Note 2)
Qgd
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
30
V
-20
24
mV/
-13
1
A
-1
100
nA
100
1 1.6 3
-0.4 -0.7 -1.5
V
-4
mV/
3
14 18
21 29
17 23
m
36 46
49 80
47 63
20
A
-20
28
S
16
1958
1312
pF
424
pF
240
182
pF
106
15 27
15 27
ns
5 10
15 27
ns
38 61
40 64
ns
10 20
25 40
ns
17 27
nC
13 21
4
nC
2.5
5
nC
2.0
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SMD Type
TransistIoCrs
KDS4501H
Electrical Characteristics Ta = 25
Parameter
Maximum Continuous Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Symbol
Testconditons
IS
VGS = 0 V, IS = 2.1A (Not 2)
VSD
VGS = 0 V, IS = -2.1A (Not 2)
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
2.1
A
-2.1
1.2
V
-1.2
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KDS4501H Complementary PowerTrench Half-Bridge MOSFET KDS4501H
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