KBJ406G Datasheet PDF - CHENG-YI

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KBJ406G
CHENG-YI

Part Number KBJ406G
Description SINGLE-PHASE SILICON BRIDGE
Page 2 Pages


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RS4005G thru RS410G
KBJ4005G thru KBJ410G
SINGLE-PHASE SILICON BRIDGE
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS
CURRENT
4.0 Amperes
.118(3.0)X45
.992(25.2)
.916(26.0)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Realiable low cost construction utilizing
molded plastic technique
Plastic material has Underwriters Laboratory
flammability classification 94V-O
Lead solderable per MIL-STD-202 Meyhod 208
Surge overload rating to 120 Amperes peak
Polarity symbols molded on body
Mounting position:Any
Weight:0.16 ounce 4.6 grams
+~~-
.134(3.4)
.122(3.1)
.043(1.1)
.035(0.9)
.114(2.9)
.098(2.5)
.030(7.70)
.287(7.30)
.043(1.1)
.031(.80)
All Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 250C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @ TC=1150C
VRRM
VRMS
VDC
RS4005G RS401G RS402G RS404G RS406G RS408G RS410G
KBJ4005G KBJ401G KBJ402G KBJ404G KBJ406G KBJ408G KBJ410G
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
UNITS
V
V
V
V(AV)
4.0
A
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC METHOD)
IFSM
120
A
Maximum DC Forward Voltage
drop per element at 2.0A DC
VF
1.0
V
Maximum DC Reverse Current at rated @ TA=2500C
DC Blocking Voltage per element @ TA=1250C
IR
5
500
Typical Junction Capacitance ( Note 1)
CJ
40
Typical Thermal Resistance ( Note 2)
R JC
5.5
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
Notes:1.Measured at 1.0 MHZ and applied reverse voltage of 4.0v DC 2.Thermal Resistance Junction to Case
A
A
PF
0C/W
0C
0C



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RS4005G thru RS410G
KBJ4005G thru KBJ410G
SINGLE-PHASE SILICON BRIDGE
RATING AND CHARACTERISTICS CURVES
KBJ4005G THRU KBJ410G
RS4005G THRU RS410G
CHENG- YI
ELECTRONIC
Fig.1 - MAXIMUM FORWARD SURGE CURRENT
5
4
3
2
1
60Hz RESISTIVE OR
INDUCTIVE LOAD
25 50 75 100 125
CASE TEMPERATURE, 0C
Fig.2 - TYPICAL FORWARD
CHARACTERISTICS
10
TJ=150C0
150
1.0
TJ=250C
0.1
.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.3 - TYPICAL JUNCTION CAPACITANCE
100
TJ=250C
f=1.0MHz
50
Fig.4 - MAXIMUM NON-REPETITIVE SURGE CURRENT
120
100
80
TJ=150C0
single sine-wave
(JEDEC Method)
60
40
20
0
12
5 10 20
50
NUMBER OF CYCLES AT 60 Hz
100
Fig.5 - TYPICAL REVERSE
CHARACTERISTICS
1000
TJ=150C0
TJ=125C0
100
TJ=100C0
10
1.0
TJ=250C
.01
0
20
40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE
10
1 4 10
REVERSE VOLTAGE, VOLTS
100



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