K3161 Datasheet PDF - Renesas Technology

www.Datasheet-PDF.com

K3161
Renesas Technology

Part Number K3161
Description 2SK3161
Page 9 Pages


K3161 datasheet pdf
View PDF for PC
K3161 pdf
View PDF for Mobile


No Preview Available !

2SK3161(L), 2SK3161(S)
www.DataSheet4U.com
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS =90 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
REJ03G1086-0300
(Previous: ADE-208-734A)
Rev.3.00
Sep 07, 2005
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
4
G
12
3
123
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.3.00 Sep 07, 2005 page 1 of 8



No Preview Available !

2SK3161
Absolute Maximum Ratings
www.DataSheet4U.com
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
200
±20
15
60
15
15
15
75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
200
±20
1.0
16
Typ
90
95
20
1600
510
250
20
120
400
170
0.85
100
Max
±10
10
2.5
115
125
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10V
ID = 8 A, VGS = 10VNote4
ID = 8 A, VGS = 4 V Note4
ID = 8 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 8 A, VGS = 10 V,
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
diF/ dt = 50 A /µs
Rev.3.00 Sep 07, 2005 page 2 of 8



No Preview Available !

2SK3161
Main Characteristics
www.DataSheet4U.coPmower vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature TC (°C)
Typical Output Characteristics
50
Pulse Test
10 V
40 6 V
4V
3.5 V
30
20
3V
10
VGS =2.5 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
ID = 15 A
1 10 A
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.3.00 Sep 07, 2005 page 3 of 8
Maximum Safe Operation Area
100
30
10
1 m10s01µ0sµs
3
1
0.3
OperDaCtiOonpPeirWnatio=n10(Tmc =s
this area is
(1shot)
25°C)
0.1 limited by RDS(on)
0.03
Ta = 25°C
0.01
1 2 5 10 20
50 100 200 500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
–25°C
25°C
0 1 23 45
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
500
Pulse Test
200
VGS = 4 V
100
10 V
50
20
10
12
5 10 20 50 100
Drain Current ID (A)



No Preview Available !

2SK3161
Static Drain to Source on State
Resistance vs. Temperature
www.DataShee5t40U0.com
Pulse Test
400
300 5, 10 A
200
VGS = 4 V
15 A
5, 10 A
100 15 A
10 V
0
–40 0 40 80 120 160
Case Temperature TC (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
200
VDS
160
120
20
VGS 16
VDD = 150 V
100 V
50 V
12
80 8
ID = 15 A
40 VDD = 150 V
100 V
4
50 V
0
0 40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
25°C
20
Tc = –25°C
10
75°C
5
2
1 VDS = 10 V
Pulse Test
0.5
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Typical Capacitance
vs. Drain to Source Voltage
10000
5000
2000
1000
Ciss
500
200 Coss
100 Crss
50
20 VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
300
tf
100
td(off)
30 tr
td(on)
10
3
1
0.1 0.3
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
1 3 10 30 100
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 8



K3161 datasheet pdf
Download PDF
K3161 pdf
View PDF for Mobile


Related : Start with K316 Part Numbers by
K3161 2SK3161 K3161
Renesas Technology
K3161 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact