K1835 Datasheet PDF - Hitachi Semiconductor

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K1835
Hitachi Semiconductor

Part Number K1835
Description 2SK1835
Page 10 Pages


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2SK1835
Silicon N-Channel MOS FET
Application
High speed power switching
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Features
High breakdown voltage (VDSS = 1500V)
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator
Outline and Equivalent Circuit
TO-3P
D
G
1
2
3 1. Gate
2. Drain
(Flange)
S
3. Source



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2SK1835
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
www.DataNSohteeest4U1..coPmW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
1500
±20
4
10
4
125
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



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2SK1835
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
1500
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
0.9
Typ
4.6
1.4
Max
±1
500
4.0
7.0
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Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
1700
230
100
25
80
230
80
0.85
2500 —
Unit
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A
VGS = 15 V*1
ID = 2 A
VDS = 20V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2A
VGS = 10 V
RL = 15
IF = 4 A, VGS = 0
IF = 4 A, VGS = 0,
diF / dt = 100 A / µs
3



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2SK1835
Power vs. Temperature Derating
200
150
100
50
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0
50 100 150
Case Temperature Tc (°C)
200
Typical Output Characteristics
5
10 V
8V
Pulse Test
4
6V
3
5V
2
1 V GS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
50
30
10
3
1
0.3
DC
PW
Operatio=n
Operation in this
area is ilmited by
1(T0cm=s2(51°sCh)ot)
R DS (on)
0.1
Ta = 25°C
0.05
10 30 100 300 1000
3000 10000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 20 V
4 Pulse Test
Tc = –25°C
25°C
75°C
3
2
1
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4



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