K10A50D Datasheet PDF - Toshiba

www.Datasheet-PDF.com

K10A50D
Toshiba

Part Number K10A50D
Description TK10A50D
Page 6 Pages


K10A50D datasheet pdf
Download PDF
K10A50D pdf
View PDF for Mobile

No Preview Available !

TK10A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK10A50D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.)
High forward transfer admittance: Yfs= 5.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
±30
10
40
45
264
10
4.5
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.49 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1 2010-06-03
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

Electrical Characteristics (Ta = 25°C)
TK10A50D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
500
2.0
1.3
tr 10 V
VGS
0V
ID = 5 A VOUT
ton
50 Ω
RL = 40 Ω
tf
VDD 200 V
toff Duty 1%, tw = 10 μs
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 10 A
Qgd
Typ.
0.62
5.0
1050
5
100
Max
±1
10
4.0
0.72
25
60
10
75
20
13
7
Unit
μA
μA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 10 A
⎯ ⎯ 40 A
⎯ ⎯ −1.7 V
1300
ns
12 ⎯ μC
Marking
K10A50D
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2010-06-03



No Preview Available !

ID – VDS
10
COMMON SOURCE
Tc = 25°C
10
PULSE TEST
8
6
7.5
8
7
4 6.5
2 VGS = 6 V
0
02468
DRAIN-SOURCE VOLTAGE VDS
10
(V)
ID – VGS
20
COMMON SOURCE
VDS = 10 V
PULSE TEST
16
12
8
25
4
100 Tc = −55 °C
0
0 246 8
GATE-SOURCE VOLTAGE VGS
10
(V)
TK10A50D
ID – VDS
20
10 8
16 COMMON SOURCE
Tc = 25°C
PULSE TEST
12
7.5
8
7
4 6.5
VGS = 6 V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
VDS – VGS
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
8
ID = 10 A
6
4
5
2 2.5
0
0 4 8 12
GATE-SOURCE VOLTAGE
16
VGS
20
(V)
Yfs– ID
100
COMMON SOURCE
VDS = 10 V
PULSE TEST
10 Tc = −55 °C
100 25
1
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V
0.1
0.1 1 10 100
DRAIN CURRENT ID (A)
0.1
0.1 1 10 100
DRAIN CURRENT ID (A)
3 2010-06-03



No Preview Available !

RDS (ON) – Tc
2
COMMON SOURCE
VGS = 10 V
PULSE TEST
1.6
10
1.2
5
ID = 2.5 A
0.8
0.4
0
80 40
0
40 80 120 160
CASE TEMPERATURE Tc (°C)
TK10A50D
IDR – VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1 10
5
31
VGS = 0 V
0.1
0
0.3
0.6
0.9
1.2
1.5
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
100
CAPACITANCE – VDS
Ciss
Coss
10
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80 40
0
40
80 120
CASE TEMPERATURE Tc (°C)
160
PD – Tc
50
40
30
20
10
0
0 40 80 120 160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500 20
400 VDS
300
200
100
16
200
VDD = 100 V
400
12
VGS
COMMON SOURCE
ID = 10 A
Tc = 25°C
PULSE TEST
8
4
00
0 6 12 18 24 30
TOTAL GATE CHARGE Qg (nC)
4 2010-06-03



K10A50D datasheet pdf
Download PDF
K10A50D pdf
View PDF for Mobile


Related : Start with K10A50 Part Numbers by
K10A50D TK10A50D K10A50D
Toshiba
K10A50D pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact