K1067 Datasheet PDF - Sanyo

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K1067
Sanyo

Part Number K1067
Description 2SK1067
Page 5 Pages


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Ordering number:EN2719
N-Channel Silicon MOSFET
2SK1067
FM Tuner, VHF-Band Amplifier Applications
Features
· Low noise NF=1.8dB typ (f=100MHz).
· High power gain PG=27dB typ (f=100MHz).
· Small reverse transfer capacitance Crss=0.035pF
(VDS=10V, f=1MHz).
· Ultrasmall-sized package (MCP) permitting
2SK1067-applied sets to be made smaller and
slimmer.
Package Dimensions
unit:mm
2057
[2SK1067]
0.3
3
0.15
0 to 0.1
12
0.65 0.65
2.0
0.3
0.9
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
Tch
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
VDSX VGS=–4V, ID=100µA
Gate-to-Source Leakage Current
IGSS VDS=0V, VGS=±5V
Zero-Gate Voltage Drain Current
IDSS VDS=10V, VGS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=100µA
Forward Transfer Admittance
| yfs | VDS=10V, VGS=0, f=1kHz
Input Capacitance
Ciss VDS=10V, VGS=0, f=1MHz
Reverse Transfer Capacitance
Crss VDS=10V, VGS=0, f=1MHz
* : The 2SK1067 is classified by IDSS as follows (unit : mA) :
1.2 3 3.0 2.5 4 6.0 5.0 5 12.0
(Note) Marking : CJ
IDSS rank : 3, 4, 5
1 : Gate
2 : Drain
3 : Source
SANYO : MCP
Ratings
16
±5
30
150
125
–55 to +125
Unit
V
V
mA
mW
˚C
˚C
Ratings
min typ max
Unit
16 V
10 nA
1.2* 12.0* mA
–2.5 V
11 mS
2.3 pF
0.035
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/N158MO, TS No.2719–1/5



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Continued from preceding page.
Parameter
Power Gain
Noise Figure
2SK1067
Symbol
PG
NF
Conditions
VDS=10V, VGS=0, f=100MHz,
See specified Test Circuit
VDS=10V, VGS=0, f=100MHz,
See specified Test Circuit
PG, NF Specified Test Circuit
Ratings
27
1.8
Unit
dB
3.0 dB
No.2719–2/5



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2SK1067
No.2719–3/5



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2SK1067
No.2719–4/5



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