K1058 Datasheet PDF - Renesas Technology

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K1058
Renesas Technology

Part Number K1058
Description 2SK1058
Page 6 Pages


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2SK1056, 2SK1057, 2SK1058
Silicon N Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1
2
3
S
REJ03G0906-0200
(Previous: ADE-208-1244)
Rev.2.00
Sep 07, 2005
1. Gate
2. Source
(Flange)
3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5



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2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSX
VGSS
ID
IDR
Pch*1
Tch
Tstg
Item
Drain to source
2SK1056
breakdown voltage
2SK1057
2SK1058
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse test
Symbol
V(BR)DSX
V(BR)GSS
VGS(off)
VDS(sat)
|yfs|
Ciss
Coss
Crss
ton
toff
Min
120
140
160
±15
0.15
0.7
Typ
1.0
600
350
10
180
60
Ratings
120
140
160
±15
7
7
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
(Ta = 25°C)
Max Unit
Test conditions
— V ID = 10 mA, VGS = –10 V
1.45
12
1.4
V IG = ±100 µA, VDS = 0
V ID = 100 mA, VDS = 10 V
V ID = 7 A, VGD = 0 *2
S ID = 3 A, VDS = 10 V *2
pF VGS = –5 V, VDS = 10 V,
pF f = 1 MHz
pF
ns VDD = 20 V, ID = 4 A
ns
Rev.2.00 Sep 07, 2005 page 2 of 5



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2SK1056, 2SK1057, 2SK1058
Main Characteristics
Power vs. Temperature Derating
150
100
50
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
10
8
VGS = 10 V
9
TC = 25°C
8
67
6
45
2
4
Pch
3
=
100
W
2
1
0
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation
Voltage vs. Drain Current
10
VGD = 0
5
2
25°C
75°C
=
–25°C
TC
1.0
0.5
0.2
0.1
0.1
0.2 0.5 1.0 2 5
Drain Current ID (A)
10
Rev.2.00 Sep 07, 2005 page 3 of 5
Maximum Safe Operation Area
20
Ta = 25°C
10
5
2
ID
max
(Continuous)
PW =PW1 sP=W11=0s0h1o0mtmss11sshhoott
1.0
0.5
2SK1056 2SK1057
0.2
5 10 20
2SK1058
50 100 200 500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
0 0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage VGS (V)
Drain to Source Voltage vs.
Gate to Source Voltage
10
8 TC = 25°C
6
5A
4
2 2A
ID = 1 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)



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2SK1056, 2SK1057, 2SK1058
1000
Input Capacitance vs. Gate
Source Voltage
500
200
VDS = 10 V
f = 1 MHz
100
0 –2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Frequency
3.0
1.0
0.3
0.1
0.03
0.01
TC = 25°C
VDS = 10 V
ID = 2 A
0.003
10 k 30 k 100 k 300 k 1 M 3 M 10 M
Frequency f (Hz)
Switching Time vs. Drain Current
500
200 ton
100
50
toff
20
10
5
0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10
Switching Time Test Circuit
Output
RL= 2
Input
PW = 50 µs
duty ratio
=1%
50
20 V
Input
10 %
t on
Output
90 %
Waveforms
90 %
t off
10 %
Rev.2.00 Sep 07, 2005 page 4 of 5



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