K06T60 Datasheet PDF - Infineon


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K06T60
Infineon

Part Number K06T60
Description IGBT
Page 13 Pages

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TRENCHSTOPSeries
IKP06N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction
cooking
- Uninterrupted Power Supply
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IKP06N60T
VCE
600V
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
6A
1.5V
175C
Marking
K06T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Value
600
12
6
18
18
12
6
18
20
5
88
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
Rev. 2.5 20.09.2013



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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
TRENCHSTOPSeries
Symbol
RthJC
RthJCD
RthJA
Conditions
IKP06N60T
p
Max. Value
1.7
2.6
62
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V,
IC=0.25mA
VGE = 15V, IC=6A
Tj=25C
Tj=175C
VGE=0V, IF=6A
Tj=25C
Tj=175C
IC=0.18mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=6A
min.
Value
typ.
Unit
max.
600 -
-V
- 1.5 2.05
- 1.8
- 1.6 2.05
- 1.6 -
4.1 4.6 5.7
µA
- - 40
- - 700
- - 100 nA
- 3.6 - S
none
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
- 368 - pF
Output capacitance
Coss
VGE=0V,
- 28 -
Reverse transfer capacitance
Crss
f=1MHz
- 11 -
Gate charge
QGate
VCC=480V, IC=6A
-
42
- nC
VGE=15V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
- 7 - nH
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
-
55
-A
VCC = 400V,
Tj = 25C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 20.09.2013



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TRENCHSTOPSeries
IKP06N60T
p
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=25C,
VR=400V, IF=6A,
diF/dt=550A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9
6
130
58
0.09
0.11
0.2
123
190
5.3
450
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- nC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=175C
VR=400V, IF=6A,
diF/dt=550A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9
8
165
84
0.14
0.18
0.335
180
500
7.6
285
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- nC
-A
- A/s
IFAG IPC TD VLS
3
Rev. 2.5 20.09.2013



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TRENCHSTOPSeries
IKP06N60T
p
18A
15A
12A
9A
TC=80°C
TC=110°C
6A Ic
3A Ic
0A
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 23)
10A
tp=1µs
5µs
10µs
1A 50µs
500µs
0,1A
1V
5ms
DC
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 175C;VGE=0/15V)
80W
15A
60W
40W
20W
10A
5A
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
4
Rev. 2.5 20.09.2013




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