JCS80N10FF Datasheet PDF - JILIN SINO-MICROELECTRONICS

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JCS80N10FF
JILIN SINO-MICROELECTRONICS

Part Number JCS80N10FF
Description N-CHANNEL MOSFET
Page 11 Pages


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N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS80N10F
主要参数 MAIN CHARACTERISTICS
ID 80 A
VDSS 100 V
Rdson(@Vgs=10V) 12 mΩ
Qg 115nC
封装 Package
产品用途
z用 于 高 功 率
DC/DC 转换和功
率开关
z 直流电机控制和
D 类放大器
APPLICATIONS
z High efficiency switching
DC/DC converters and
switch mode power supply
z DC Motor control and
Class D Amplifier
产品特性
z低栅极电荷
z Crss
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
JCS80N10CF-O-C-N-B
JCS80N10FF-O-F-N-B
JCS80N10SF-O-S-N-A
JCS80N10SF-O-S-N-B
JCS80N10WF-O-W-N-B
印记
Marking
JCS80N10CF
JCS80N10FF
JCS80N10SF
JCS80N10SF
JCS80N10WF
封装
Package
TO-220C
TO-220MF
TO-263
TO-263
TO-247
无卤素
包装
Halogen Free Packaging
NO
NO
NO
NO
NO
条管 Tube
条管 Tube
卷盘 Reel
条管 Tube
条管 Tube
器件重量
Device
Weight
2.15 g(typ)
2.2 g(typ)
1.37 g(typ)
1.37 g(typ)
5.2 g(typ)
版本:201412A
1/11



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R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
JCS80N10F
项目
Parameter
符号
Symbol
最高漏极-源极直流电压
Drain-Source Voltage
VDSSB B
连续漏极电流
Drain Current-continuous
IDB
T=25
B
T=100
最大脉冲漏极电流(注 1
Drain Current – pulsenote 1
IDMB B
最高栅源电压
Gate-Source Voltage
VGSSB B
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energynote 2
EASB B
雪崩电流(注 1
Avalanche Current(note 1)
IARB B
重复雪崩能量(注 1
Repetitive Avalanche Energy note 1
EARB B
二极管反向恢复最大电压变化速率(注 3
Peak Diode Recovery Dv/dt note 3
dv/dt
耗散功率
Power Dissipation
P T =25D CB B B B
-Derate
above 25
最高结温及存储温度
Operating and StorageTemperature Range
T TJ STGB B
BB
引线最高焊接温度
Maximum LeadTemperature for Soldering
Purposes
TLB B
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
数 值 Value
JCS80N10C JCS80N
F/SF/WF
10FF
100
80 38
66 27
320 152
±20
1500
55
25.4
9.0
254 35.8
1.69 0.24
-55+175
300
单位
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
版本:201412A
2/11



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R JCS80N10F
电特性 ELECTRICAL CHARACTERISTICS
项目
符号
测试条件
最大 典型 最 大单 位
Parameter
Symbol
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSSB B
IBDB=250μA, VBGSB=0V
100 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVBDSSB/Δ
TJB B
IBDB=1mA,
referenced
to
25
- 0.13 -
V/
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSSB B
正向栅极体漏电流
Gate-body leakage current, forward IBGSSFB
VBDSB=100V,VBGSB=0V,TBCB=25
VBDSB=80V, TBCB=125
VBDSB=0V, VGSB B =20V
-
-
-
- 1 μA
- 10 μA
- 100 nA
反向栅极体漏电流
Gate-body leakage current, reverse IBGSSRB
VBDSB=0V, VGSB B =-20V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VBGS(th)B
V = V ,DSB B
GSB B
IBDB=250μA
2.0 - 4.0 V
静态导通电阻
Static Drain-Source On-Resistance RBDS(ON)B
VGSB B =10V , IBDB=40A
- 9.7 12 m
正向跨导
Forward Transconductance
gfsB B
VDSB B = 25V , IBDB=40Anote 4- 64 -
S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
输出电容
Output capacitance
CissB B
CossB B
VBDSB=25V,
VGSB B =0V,
f=1.0MHBZB
- 5960 - pF
- 580 - pF
反向传输电容
Reverse transfer capacitance
CrssB B
- 252 - pF
版本:201412A
3/11



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R JCS80N10F
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
延迟时间 Turn-Off delay time
下降时间 Turn-Off Fall time
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
tBdB(on)
trB B
tBdB(off)
tfB B
QgB B
QgsB B
QgdB B
VBDDB=50V,IBDB=40A,RBGB=4.7
note 45
VDSB B =80V ,
IBDB=80A
VGSB B =10V
note 45
- 36
ns
- 43
ns
- 130
ns
- 32
ns
- 115 153 nC
- 25 - nC
- 42 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
ISB B
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISMB B
正向压降
Drain-Source Diode Forward
Voltage
VSDB B
VBGSB=0V,
IBSB=40A
反向恢复时间
Reverse recovery time
trrB B
反向恢复电荷
Reverse recovery charge
QrrB B
热特性 THERMAL CHARACTERISTIC
VBGSB=0V, IBSB=80A
dIBFB/dt=100A/μs (note 4)
项目
Parameter
最大
符号
Max
Symbol
JCS80N10CF/SF/WF
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.59
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
- - 80 A
- - 320 A
- - 1.3 V
- 154 - ns
- 862 - μC
单位
Unit
JCS80N10FF
3.49 /W
/W
注释:
1:脉冲宽度由最高结温限制
2L=0.5mH, IBASB=55A, RBGB=25 ,起始结温TBJB=25
3ISDB B 80A,di/dt 300A/μs,VDDBVBDSSB,起始结温
TBJB=25
4:脉冲测试:脉冲宽度300μs,占空比2
5:基本与工作温度无关
Notes:
1Pulse width limited by maximum junction temperature
2L=0.5mH, IBASB=55A, RBGB=25 ,Starting TBJB=25
3ISDB B 80A,di/dt 300A/μs,VDDBVBDSSB, Starting TBJB=25
4Pulse TestPulse Width 300μs,Duty Cycle2
5Essentially independent of operating temperature
版本:201412A
4/11



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Related : Start with JCS80N10F Part Numbers by
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JCS80N10FF pdf

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