JCS630C Datasheet PDF - JILIN SINO-MICROELECTRONICS

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JCS630C
JILIN SINO-MICROELECTRONICS

Part Number JCS630C
Description N-CHANNEL MOSFET
Page 14 Pages


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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS630V/R/S/B/C/F
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.0 A
VDSS 200 V
Rdson(@Vgs=10V) 0.4 Ω
Qg 22 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
zCrss (典型值 23pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 23pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
印记
Order codes
Marking
JCS630V-O-V-N-B
JCS630V
JCS630R-O-R-N-B
JCS630R
JCS630R-O-R-N-A
JCS630R
JCS630S-O-S-N-B
JCS630S
JCS630B-O-B-N-B
JCS630B
JCS630C-O-C-N-B
JCS630C
JCS630F-O-F-N-B
JCS630F
封装
Package
IPAK
DPAK
DPAK
TO-263
TO-262
TO-220C
TO-220MF
无卤素
Halogen Free
NO
NO
NO
NO
NO
NO
NO
包装
Packaging
条管 Tube
条管 Tube
编带 Brede
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device Weight
0.35 g(typ)
0.30 g(typ)
0.30 g(typ)
1.37 g(typ)
1.71 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201003A
1/14



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R JCS630V/R/S/B/C/F
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
项目
Parameter
符号
Symbol
JCS630V/R
数值
Value
JCS630S/B/C
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
200
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
9.0
5.7
最大脉冲漏极电流(注 1
Drain Current - pulse
note 1
IDM
36
最高栅源电压
Gate-Source Voltage
VGSS
±30
单脉冲雪崩能量(注 2
Single Pulsed Avalanche
Energynote 2
EAS
160
雪崩电流(注 1
Avalanche Currentnote 1
IAR
9.0
重复雪崩能量(注 1
Repetitive Avalanche Current
note 1
EAR
7.2
二极管反向恢复最大电压变化
速率(注 3
Peak Diode Recovery dv/dt
dv/dt
5.5
note 3
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
48
0.39
72
0.57
25
最高结温及存储温度
Operating and Storage
Temperature Range
TJTSTG
-55+150
引线最高焊接温度
Maximum Lead Temperature
for Soldering Purposes
TL
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
JCS630F
9.0*
5.7*
36*
38
0.3
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
版本:201003A
2/14



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R
电特性 ELECTRICAL CHARACTERISTICS
JCS630V/R/S/B/C/F
项目
符号
测试条件
最大 典型 最 大单 位
Parameter
Symbol Tests conditions Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS ID=250μA, VGS=0V
200 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA, referenced to
TJ 25
- 0.2 - V/
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=200V,VGS=0V,
TC=25
VDS=160V, TC=125
VDS=0V, VGS =30V
- - 10 μA
- - 100 μA
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON) VGS =10V , ID=4.5A
- 0.34 0.4
正向跨导
Forward Transconductance
gfs
VDS = 40V, ID=4.5Anote
4
- 7.05 -
S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
VDS=25V,
VGS =0V,
f=1.0MHZ
- 550 720 pF
- 85 110 pF
反向传输电容
Reverse transfer capacitance
Crss
- 22 29 pF
版本:201003A
3/14



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R JCS630V/R/S/B/C/F
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=100V,ID=9.0A,RG=25- 11 30 ns
note 45
- 70 150 ns
延迟时间 Turn-Off delay time
td(off)
- 60 130 ns
下降时间 Turn-Off Fall time
tf
- 65 140 ns
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Qg
Qgs
Qgd
VDS =160V ,
ID=9.0A
VGS =10V note 45
- 22 29
- 3.6 -
- 10.2 -
nC
nC
nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 9.0 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 36 A
正向压降
Drain-Source Diode Forward VSD VGS=0V, IS=9.0A
Voltage
- - 1.5 V
反向恢复时间
Reverse recovery time
反向恢复电荷
Reverse recovery charge
trr VGS=0V, IS=9.0A
- 140 - ns
Qrr
dIF/dt=100A/μs (note 4)
- 0.87 - μC
热特性 THERMAL CHARACTERISTIC
项目
Parameter
最大
符号
Max
Symbol
JCS630V/R JCS630S/B/C JCS630F
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.70
1.74
3.33 /W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
110
62.5
62.5 /W
注释:
1:脉冲宽度由最高结温限制
2L=25mH, IAS=9.0A, VDD=50V, RG=25 ,起始结
TJ=25
3ISD 9.0A,di/dt 200A/μs,VDDBVDSS,起始结温
TJ=25
4:脉冲测试:脉冲宽度300μs,占空比2
5:基本与工作温度无关
Notes:
1Pulse width limited by maximum junction
temperature
2L=25mH, IAS=9.0A, VDD=50V, RG=25 ,Starting
TJ=25
3ISD 9.0A,di/dt 200A/μs,VDDBVDSS, Starting
TJ=25
4Pulse TestPulse Width 300μs,Duty Cycle2
5Essentially independent of operating temperature
版本:201003A
4/14



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