JCS630 Datasheet PDF - JILIN SINO-MICROELECTRONICS

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JCS630
JILIN SINO-MICROELECTRONICS

Part Number JCS630
Description N-CHANNEL MOSFET
Page 14 Pages


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R
JCS630
主要参数 MAIN CHARACTERISTICS
ID
VDSS
Rdson(@Vgs=10V)
Qg
9.0A
200 V
0.4Ω
22nC
封装 Package
N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
用途
高频开关电源
电子镇流器
UPS 电源
APPLICATIONS
High efficiency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
UPS
产品特性
低栅极电荷
Crss (典型值 22pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low Crss (typical 22pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
JCS630V-O-V-N-B
JCS630R-O-R-N-B
JCS630R-O-R-N-A
JCS630S-O-S-N-B
JCS630B-O-B-N-B
JCS630C-O-C-N-B
JCS630F-O- F-N-B
印记
Marking
JCS630V
JCS630R
JCS630R
JCS630S
JCS630B
JCS630C
JCS630F
封装
无卤素
包装
Package Halogen Free Packaging
IPAK
DPAK
DPAK
TO-263
TO-262
TO-220C
TO-220MF
NO
NO
NO
NO
NO
NO
NO
条管 Tube
条管 Tube
编带 Brede
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device
Weight
0.35 g(typ)
0.30 g(typ)
0.30 g(typ)
1.37 g(typ)
1.71 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201505C
1/14



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绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
数值
项目
Value
符 号 JCS630V/R JCS630S/B/C
Parameter
Symbol
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
200
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
9.0
5.7
最大脉冲漏极电流(注 1
Drain Current -pulse note 1
最高栅源电压
Gate-Source Voltage
IDM
VGSS
36
±30
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energy
note 2
雪崩电流(注 1
Avalanche Current note 1
EAS
IAR
160
9.0
重复雪崩能量(注 1
Repetitive Avalanche Current
note 1
二极管反向恢复最大电压变化速率
EAR
7.2
(注 3
Peak Diode Recovery dv/dt note
3
dv/dt
5.5
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
25
48
0.39
72
0.57
最高结温及存储温度
Operating and Storage
Temperature Range
引线最高焊接温度
TJTSTG
-55+150
Maximum Lead Temperature for
Soldering Purposes
TL
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
JCS630
JCS630F
Unit
V
9.0* A
5.7* A
36* A
V
mJ
A
mJ
V/ns
38 W
0.3 W/
版本:201505C
2/14



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电特性 ELECTRICAL CHARACTERISTIC
JCS630
项目
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
正向栅极体漏电流
Gate-body leakage current, forward
反向栅极体漏电流
Gate-body leakage current, reverse
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
静态导通电阻
Static Drain-Source On-Resistance
正向跨导
Forward Transconductance
动态特性 Dynamic Characteristics
输入电容
Input capacitance
输出电容
Output capacitance
反向传输电容
Reverse transfer capacitance
符号
Symbol
测试条件
Tests conditions
最小 典型 最 大单 位
Min Typ Max Units
BVDSS ID=250μA, VGS=0V
200 - -
V
ΔBVDSS ID=250μA, referenced to
/ΔTJ 25
- 0.2 - V/
IDSS
IGSSF
VDS=200V, VGS=0V, TC=25
VDS=160V, TC=125
-
-
VDS=0V, VGS =30V
-
- 1 μA
- 10 μA
-
100 nA
IGSSR VDS=0V, VGS =-30V
-
- -100 nA
VGS(th) VDS = VGS , ID=250μA
2.0 - 4.0 V
RDS(ON) VGS =10V , ID=4.5A
- 0.34 0.4
gfs VDS = 40V , ID=4.5Anote 4- 7.05 - S
Ciss
Coss
VDS=25V,
VGS =0V,
f=1.0MHZ
- 550 720 pF
- 85 110 pF
Crss - 22 29 pF
版本:201505C
3/14



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R
电特性 ELECTRICAL CHARACTERISTICS
JCS630
项目
符号
测试条件
最小 典型 最大 单位
Parameter
Symbol
Tests conditions
Min Typ Max Units
开关特性 Switching –Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on) VDD=100V,ID=9.0A,RG=25Ω - 11 30 ns
tr note 45
- 70 150 ns
延迟时间 Turn-Off delay time
td(off)
- 60 130 ns
下降时间 Turn-Off Fall time
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
tf
Qg VDS =160V ,
Qgs ID=9.0A
Qgd VGS =10Vnote 45
- 65 140 ns
- 22 29 nC
- 3.6 - nC
- 10.2 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain-Source
Diode Forward Current
正向最大脉冲电流
IS - - 9.0 A
Maximum Pulsed Drain-Source Diode
Forward Current
正向最大连续电流
ISM
- - 36 A
Maximum Continuous Drain-Source VSD
Diode Forward Current
VGS=0V, IS=9.0A
反向恢复时间
Reverse recovery time
trr VGS=0V, IS=9.0A
反向恢复电荷
Reverse recovery charge
dIF/dt=100A/μs (note 4)
Qrr
热特性 THERMAL CHARACTERISTIC
项目
Parameter
符号
最大值
Value
Symbol
JCS630V/R JCS630S/B/C
结到管壳的热阻
Rth(j-c)
Thermal Resistance, Junction to Case
2.70
1.74
结到环境的热阻
Thermal Resistance, Junction to
Rth(j-A)
110
62.5
Ambient
- 1.5 V
140 ns
0.87 μC
JCS630F
单位
Unit
3.33 /W
62.5 /W
注:
Notes:
1:脉冲宽度由最高结温限制
1Pulse width limited by maximum junction temperature
2L=25mH, IAS=9.0A, VDD=50V, RG=25 Ω,起始结温
TJ=25
2L=25mH, IAS=9.0A, VDD=50V, RG=25 Ω,Starting
TJ=25
3ISD ≤9.0A,di/dt ≤200A/μs, VDD≤BVDSS,起始结温 TJ=253ISD ≤9.0A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25
4:脉冲测试:脉冲宽度≤300μs,占空比≤2
4Pulse TestPulse Width ≤300μs, Duty Cycle≤2
5:基本与工作温度无关
5Essentially independent of operating temperature
版本:201505C
4/14



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