JCS1404C Datasheet PDF - JILIN SINO-MICROELECTRONICS

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JCS1404C
JILIN SINO-MICROELECTRONICS

Part Number JCS1404C
Description N-CHANNEL MOSFET
Page 9 Pages


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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS1404
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 204 A
VDSS
40 V
Rdson(@Vgs=10V) 4 m
用途
z 高频开关电源
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z UPS
产品特性
z低栅极电荷
zCrss (典型值 235pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 235pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS1404C-O-C-N-B
JCS1404F-O-F-N-B
JCS1404C
JCS1404F
封装
Package
TO-220C
TO-220MF
无卤素
Halogen
Free
NO
NO
包装
Packaging
条管 Tube
条管 Tube
器件重量
Device
Weight
2.15 g(typ)
2.15 g(typ)
版本:201407C
1/9



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R JCS1404
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
项目
Parameter
符号
Symbol
数值
Value
JCS1404C JCS1404F
最高漏极-源极直流电压
Drain-Source Voltage
连续漏极电流
Drain Current -continuous
VDSS
ID
T=25
T=100
40
204*
140*
最大脉冲漏极电流(注 1
Drain Current – pulsenote 1
IDM
816*
最高栅源电压
Gate-Source Voltage
VGSS
±20
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energynote 2
EAS
675
重复雪崩能量(注 1
Repetitive Avalanche Currentnote 1
EAR
33.3
二极管反向恢复最大电压变化速率(注 3
Peak Diode Recovery dv/dtnote 3
耗散功率
Power Dissipation
dv/dt
PD
TC=25
-Derate
above 25
1.5
333 60
2.2 0.34
最高结温及存储温度
Operating and Storage Temperature Range TJTSTG
引线最高焊接温度
Maximum Lead Temperature for Soldering
Purposes
TL
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
-55+175
300
单位
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
版本:201407C
2/9



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R
电特性 ELECTRICAL CHARACTERISTICS
JCS1404
项目
符号
测试条件
最小 典型 最大 单位
Parameter
Symbol
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
40 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA, referenced to
TJ 25
- 0.034 - V/
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
正向栅极体漏电流
IDSS
VDS=40V,VGS=0V, TC=25
VDS=32V, TC=125
-
-
- 1 μA
- 10 μA
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =20V
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-20V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON) VGS =10V , ID=95A
- - 4 m
正向跨导
Forward Transconductance
gfs
VDS = 25V, ID=60Anote 4104 - -
S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
输出电容
Output capacitance
反向传输电容
Reverse transfer capacitance
Ciss
Coss
Crss
VDS=25V,
VGS =0V,
f=1.0MHZ
- 7280
- 1625
- 235
pF
pF
pF
版本:201407C
3/9



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R
电特性 ELECTRICAL CHARACTERISTICS
JCS1404
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
延迟时间 Turn-Off delay time
下降时间 Turn-Off Fall time
td(on)
tr
td(off)
tf
栅极电荷总量 Total Gate Charge Qg
栅-源电荷 Gate-Source charge
Qgs
栅-漏电荷 Gate-Drain charge
Qgd
VDD=20V,ID=60A,RG=25
note 45
VDS =32V ,
ID=95A
VGS =10V
note 45
- 18 - ns
- 122 - ns
- 66 - ns
- 35 - ns
- 106 150 nC
- 47 62 nC
- 11 15 nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 204 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 816 A
正向压降
Drain-Source Diode Forward
Voltage
VSD VGS=0V, IS=95A
- 1.3 V
反向恢复时间
Reverse recovery time
trr VGS=0V, IS=95A
反向恢复电荷
Reverse recovery charge
Qrr dIF/dt=100A/μs (note 4)
热特性 THERMAL CHARACTERISTIC
- 69 - ns
- 192 - μC
项目
Parameter
符号
Symbol
最大
Max
JCS1404C
JCS1404F
单位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.45
2.5 /W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
62.5 /W
注释:
1:脉冲宽度由最高结温限制
2L=0.35mH, IAS=62A, RG=25 ,起始
结温 TJ=25
3ISD 95A,di/dt 300A/μs,VDDBVDSS,起始结温
TJ=25
4:脉冲测试:脉冲宽度300μs,占空比2
5:基本与工作温度无关
Notes:
1Pulse width limited by maximum junction
temperature
2L=0.35mH, IAS=62A, RG=25 ,Starting TJ=25
3ISD 95A,di/dt 300A/μs,VDDBVDSS, Starting
TJ=25
4Pulse TestPulse Width 300μs,Duty Cycle2
5Essentially independent of operating temperature
版本:201407C
4/9



JCS1404C datasheet pdf
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