J270 Datasheet PDF - Vishay Siliconix


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J270
Vishay Siliconix

Part Number J270
Description (J270 / J271) P-Channel JFETs
Page 4 Pages

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P-Channel JFETs
PRODUCT SUMMARY
Part Number
J/SST270
J/SST271
VGS(off) (V)
0.5 to 2.0
1.5 to 4.5
V(BR)GSS Min (V)
30
30
gfs Min (mS)
6
8
IDSS Min (mA)
–2
–6
J/SST270 Series
Vishay Siliconix
J270
J271
SST270
SST271
FEATURES
D Low Cutoff Voltage: J270 <2 V
D High Input Impedance
D Very Low Noise
D High Gain
BENEFITS
D Full Performance from Low-Voltage Power
Supply: Down to 2 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality, Low-Level Signal Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage Battery
Amplifiers
D Ultrahigh Input Impedance Pre-Amplifiers
D High-Side Switching
DESCRIPTION
The J/SST270 series consists of all-purpose amplifiers for
designs requiring p-channel operation.
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA
(TO-92)
D1
G2
S3
Top View
J270
J271
TO-236
(SOT-23)
D1
S2
3G
Top View
SST270 (S0)*
SST271 (S1)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70258
S-04233—Rev. D, 02-Jul-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
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J/SST270 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Gate-Source Forward Voltage
Dynamic
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Symbol
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VGS(F)
gfs
gos
Ciss
Crss
en
Test Conditions
IG = 1 mA , VDS = 0 V
VDS = 15 V, ID = 1 nA
VDS = 15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
TA = 125_C
VDG = 15 V, ID = 1 mA
VDS = 15 V, VGS = 10 V
IG = 1 mA , VDS = 0 V
VDS = 15 V, VGS = 0 V
f = 1 kHz
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDG = 10 V, VGS = 0 V
f = 1 kHz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
Limits
J/SST270
J/SST271
Typa Min Max Min Max Unit
45 30
30
0.5 2.0 1.5 4.5
V
2 15 6 50 mA
10 200 200 pA
5 nA
10
pA
10
0.7
V
6 15 8 18 mS
200 500 mS
20
pF
4
20
nV
Hz
PSCIA
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
200 100
IDSS
160 80
rDS
120
60
80 40
40
0
0
rDS @ ID = 1 mA, VGS = 0 V
IDSS @ VDS = 15 V, VGS = 0 V
246 8
VGS(off) Gate-Source Cutoff Voltage (V)
20
0
10
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
18 250
15
gfs
12
gos
9
200
150
100
6 50
gfs and gos @ VDS = 15 V
VGS = 0 V, f = 1 kHz
30
02 4
6 8 10
VGS(off) Gate-Source Cutoff Voltage (V)
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Document Number: 70258
S-04233Rev. D, 02-Jul-01



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J/SST270 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
2
VGS = 0 V
0.2 V
1.6
0.4 V
Output Characteristics
2
1.6
VGS = 0 V
0.5 V
1.0 V
1.5 V
0.6 V
1.2
1.2
2.0 V
0.8
0.8 V
0.8
0.4
0
0
25
20
VGS(off) = 1.5 V
0.2
0.4
0.6
0.8
VDS Drain-Source Voltage (V)
1
Output Characteristics
VGS(off) = 3 V
VGS = 0 V
0.5 V
15
1.0 V
10
5
0
0
1.5 V
2.0 V
4 8 12 16
VDS Drain-Source Voltage (V)
20
Transfer Characteristics
10
VGS(off) = 1.5 V
VDS = 15 V
8
0.4
0
0
VGS(off) = 3 V
0.1
0.2
0.3
0.4
VDS Drain-Source Voltage (V)
0.5
Capacitance vs. Gate-Source Voltage
30
VDS = 0 V
f = 1 MHz
24
18
12 Ciss
Crss
6
0
04
8 12 16
VGS Gate-Source Voltage (V)
Transfer Characteristics
40
VGS(off) = 3 V
VDS = 15 V
20
32
6
4
2
0
0
TA = 55_C
25_C
125_C
0.2 0.4
0.6 0.8
VGS Gate-Source Voltage (V)
1.0
24 TA = 55_C
25_C
16
8
125_C
0
0 12 34
VGS Gate-Source Voltage (V)
5
Document Number: 70258
S-04233Rev. D, 02-Jul-01
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J/SST270 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Drain Current
100
VGS(off) = 3 V
VDS = 15 V
f = kHz
Output Conductance vs. Drain Current
100
VGS(off) = 3 V
TA = 55_C
10 25_C
TA = 55_C
10 25_C
125_C
125_C
1
0.1
1
ID Drain Current (mA)
10
On-Resistance vs. Drain Current
250
TA = 25_C
200
VGS(off) = 1.5 V
150
3V
100
5V
50
0
1
100
10
ID Drain Current (mA)
Noise Voltage vs. Frequency
100
ID = 0.1 mA
1 mA
10
VDS = 10 V
1
10 100 1 k 10 k
f Frequency (Hz)
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100 k
1
0.1
VDS = 15 V
f = kHz
1
ID Drain Current (mA)
On-Resistance vs. Temperature
300
ID = 1 mA
rDS changes X 0.7%/_C
240
10
180 VGS(off) = 1.5 V
3V
120 5 V
60
0
55 35 15 5 25 45 65 85 105 125
TA Temperature (_C)
100 nA
Gate Leakage Current
10 nA
1 nA
TA = 125_C
1 mA
ID = 10 mA
100 pA
IGSS @ 125_C
10 pA
TA = 25_C
10 mA
1 pA
1 mA
IGSS @ 25_C
0.1 pA
0
10 20 30 40
VDG Drain-Gate Voltage (V)
50
Document Number: 70258
S-04233Rev. D, 02-Jul-01




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