J212 Datasheet PDF - Vishay


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J212
Vishay

Part Number J212
Description N-Channel JFETs
Page 7 Pages

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N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V)
J210
J/SSTJ211
J/SSTJ212
–1 to –3
–2.5 to –4.5
–4 to –6
V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
–25 4 2
–25 6 7
–25 7 15
J/SSTJ210 Series
Vishay Siliconix
J210
J211
J212
SSTJ211
SSTJ212
FEATURES
D Excellent High Frequency Gain:
J211/212, Gps 12 dB (typ) @ 400 MHz
D Very Low Noise: 3 dB (typ) @
400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 35 @ 100 mA
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The J/SSTJ210 Series n-channel JFETs are general-purpose
and high-frequency amplifiers for a wide range of applications.
These devices feature low leakage (IGSS < 100 pA).
capability. The J/SSTJ210 Series is available in tape-and-reel
for automated assembly (see Packaging Information).
The TO-226AA (TO-92) plastic package, provides low cost
while the TO-236 (SOT-23) package provides surface-mount
For similar dual products, see the 2N5911/5912 and U440/441
data sheets.
TO-226AA
(TO-92)
D1
S2
G3
Top View
J210
J211
J212
TO-236
(SOT-23)
D1
S2
3G
SSTJ211 (Z1)*
SSTJ212 (Z2)*
*Marking Code for TO-236
Top View
For applications information see AN104.
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
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J/SSTJ210 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature (1/16from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J210
J/SSTJ211
J/SSTJ212
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Currenta
Drain Cutoff Current
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = 15 V, ID = 1 nA
VDS = 15 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 125_C
VDG = 10 V, ID = 1 mA
VDS = 10 V, VGS = 8 V
IG = 1 mA , VDS = 0 V
35
1
0.5
1
1
0.7
25 25 25
1 3 2.5 4.5 4 6
2 15 7 20 15 40
100
100
100
V
mA
pA
nA
pA
V
Common-Source
Forward Transconductanceb
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
gfs
VDS = 15 V, VGS = 0 V
f = 1 kHz
gos
Ciss 4
VDS = 15 V, VGS = 0 V
f = 1 MHz
Crss
1.5
en
VDS = 15 V, VGS = 0 V
f = 1 kHz
5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
4 12 6 12 7 12 mS
150 200 200 mS
pF
nV
Hz
NZF
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Document Number: 70234
S-04028Rev. E, 04-Jun-01



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J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
50 20
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
40 f = 1 kHz
16
30 12
100 nA
10 nA
1 nA
Gate Leakage Current
IG(on) @ ID
TA = 125_C
IGSS @ 125_C
10 mA
20 gfs
100 pA
8
10 pA
1 mA
10 mA
1 mA
10
IDSS
4 TA = 25_C
1 pA
IGSS @ 25_C
0
0
2 4 6 8
VGS(off) Gate-Source Cutoff Voltage (V)
0
10
0.1 pA
0
4 8 12 16
VDG Drain-Gate Voltage (V)
20
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
200
gos
160
200
160
Common-Source Forward Transconductance
vs. Drain Current
10
VGS(off) = 5 V
VDS = 10 V
f = 1 kHz
8
TA = 55_C
120 120 6
80 80
rDS
40
0
0
5
4
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
2 4 6 8
VGS(off) Gate-Source Cutoff Voltage (V)
Output Characteristics
40
0
10
VGS(off) = 2 V
VGS = 0 V
0.2 V
0.4 V
3
0.6 V
2
0.8 V
1 1.0 V
1.2 V
0
0
0.2 0.4 0.6 0.8
VDS Drain-Source Voltage (V)
1
25_C
4
125_C
2
0
0.1
1
ID Drain Current (mA)
10
Output Characteristics
15
VGS(off) = 5 V
12
VGS = 0 V
0.5 V
9 1.0 V
1.5 V
2.0 V
6
2.5 V
3.0 V
3 3.5 V
0
0
0.2 0.4 0.6 0.8
VDS Drain-Source Voltage (V)
1
Document Number: 70234
S-04028Rev. E, 04-Jun-01
www.vishay.com
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J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
10
VGS(off) = 2 V
Output Characteristics
30
VGS = 0 V
8 24
VGS = 0 V
0.5 V
1.0 V
6
0.2 V
18
1.5 V
4
2
0
0
0.4 V
0.6 V
0.8 V
1.0 V
1.2 V
2 46 8
VDS Drain-Source Voltage (V)
10
12
6
0
0
2.0 V
2.5 V
3.0 V
3.5 V
VGS(off) = 5 V
2 468
VDS Drain-Source Voltage (V)
10
Transfer Characteristics
10
VGS(off) = 2 V
VDS = 10 V
8
TA = 55_C
6 25_C
4
125_C
2
0
0
0.4
0.8
1.2
1.6
2
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
VGS(off) = 2 V
VDS = 10 V
f = 1 kHz
8 TA = 55_C
25_C
6
125_C
4
Transfer Characteristics
30
VGS(off) = 5 V
VDS = 10 V
24
TA = 55_C
18 25_C
12 125_C
6
0
0 1 2 3 4 5
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
VGS(off) = 5 V
8
25_C
6
TA = 55_C
125_C
4
2
0
0
0.4
0.8
1.2
1.6
VGS Gate-Source Voltage (V)
2
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7-4
2
VDS = 10 V
f = 1 kHz
0
0 1 2 3 4
VGS Gate-Source Voltage (V)
5
Document Number: 70234
S-04028Rev. E, 04-Jun-01




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