J212 Datasheet PDF - NXP


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J212
NXP

Part Number J212
Description N-channel field-effect transistors
Page 12 Pages

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DISCRETE SEMICONDUCTORS
DATA SHEET
J210; J211; J212
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
1997 Dec 01



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Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
FEATURES
High speed switching
Interchangeability of drain and source connections
High impedance.
APPLICATIONS
Analog switches
Choppers, multiplexers and commutators
Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
TO-92 (SOT54) package.
PINNING - TO-92 (SOT54)
PIN SYMBOL
DESCRIPTION
1 g gate
2 s source
3 d drain
1
handbook, halfpage2
3
g
MAM197
d
s
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
Marking codes:
J210: J210.
J211: J211.
J212: J212.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J210
J211
J212
IDSS drain current
J210
J211
J212
Ptot
yfs
total power dissipation
common-source transfer admittance
J210
J211
J212
CONDITIONS
ID = 1 nA; VDS = 15 V
VGS = 0; VDS = 15 V
Tamb 50 °C
VGS = 0; VDS = 15 V
MIN. MAX. UNIT
− ±25 V
1 3 V
2.5 4.5 V
4 6 V
2 15 mA
7 20 mA
15 40 mA
400 mW
4 12 mS
6 12 mS
7 12 mS
1997 Dec 01
2



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Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
VGSO
VDGO
IG
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
gate-source voltage
drain-gate voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open drain
open source
Tamb 50 °C; note 1; see Fig.13
MIN.
65
MAX.
±25
25
25
10
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
250
K/W
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2.
1997 Dec 01
3



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Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
V(BR)GSS
VGSoff
VGSS
IDSS
IGSS
yfs
yos
gate-source breakdown voltage
gate-source cut-off voltage
J210
J211
J212
gate-source forward voltage
drain current
J10
J11
J12
reverse gate leakage current
common-source transfer admittance
J210
J211
J212
common source output admittance
J210
J211
J212
CONDITIONS
IG = 1 µA; VDS = 0
ID = 1 nA; VDS = 15 V
IG = 0; VDS = 0
VGS = 0; VDS = 15 V
VGS = 15 V; VDS = 0
VGS = 0; VDS = 15 V
VGS = 0; VDS = 15 V
MIN.
MAX.
UNIT
25 V
1 3 V
2.5 4.5 V
4 6 V
1V
2 15 mA
7 20 mA
15 40 mA
100
pA
4 12 mS
6 12 mS
7 12 mS
150 µS
200 µS
200 µS
DYNAMIC CHARACTERISTICS
Tamb = 25 °C.
SYMBOL
PARAMETER
Cis input capacitance
Cos output capacitance
Crs feedback capacitance
gis common source input conductance
gfs common source transfer conductance
grs common source feedback conductance
gos common source output conductance
Vn equivalent input noise voltage
CONDITIONS
VDS = 15 V; VGS = 10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = 10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = 10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 1 kHz
TYP.
2
4
0.8
2
0.8
0.9
70
1.1
7.5
7.5
8
90
95
200
5
UNIT
pF
pF
pF
pF
pF
pF
µS
mS
mS
mS
µS
µS
µS
µS
nV/Hz
1997 Dec 01
4




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