J201 Datasheet PDF - Vishay


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J201
Vishay

Part Number J201
Description N-Channel JFETs
Page 6 Pages

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N-Channel JFETs
J/SST201 Series
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J/SST201
J/SST202
J/SST204
VGS(off) (V)
0.3 to 1.5
0.8 to 4
0.3 to 2
V(BR)GSS Min (V)
40
40
25
gfs Min (mS)
0.5
1
0.5
IDSS Min (mA)
0.2
0.9
0.2
J201
J202
J204
SST201
SST202
SST204
FEATURES
D Low Cutoff Voltage: J201 <1.5 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low Voltage
Power Supply: Down to 1.5 V
D Low Signal Loss/System Error
D High System Sensitivity
D High Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
For applications information see AN102 and AN106.
TO-226AA
(TO-92)
D1
S2
G3
Top View
J201
J202
J204
TO-236
(SOT-23)
D1
S2
3G
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
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J/SST201 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typa
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = 15 V, ID = 10 nA
VDS = 15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
TA = 125_C
VDG = 10 V, ID = 0.1 mA
VDS = 15 V, VGS = 5 V
IG = 1 mA , VDS = 0 V
2
1
2
2
0.7
Common-Source
Forward Transconductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
gfs
VDS = 15 V, VGS = 0 V
f = 1 kHz
Ciss
VDS = 15 V, VGS = 0 V
4.5
Crss
f = 1 MHz
1.3
en
VDS = 10 V, VGS = 0 V
f = 1 kHz
6
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
J/SST201
Min Max
40
0.3
0.2
1.5
1
100
0.5
Limits
J/SST202
Min Max
40
0.8
0.9
4
4.5
100
1
J/SST204c
Min Max Unit
25
0.3
0.2
2
3
100
V
mA
pA
nA
pA
V
0.5 mS
pF
nV
Hz
NPA, NH
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Document Number: 70233
S-40393—Rev. G, 15-Mar-04



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J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
8 f = 1 kHz
5
4
10 nA
1 nA
Gate Leakage Current
TA = 125_C
IG @ ID = 500 mA
ID = 100 mA
6
gfs
4
2
IDSS
3
2
1
100 pA
10 pA
1 pA
TA = 25_C
IGSS @ 125_C
ID = 500 mA
ID = 100 mA
IGSS @ 25_C
00
0 1 2 3 4 5
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1500
10
1200
gos 8
900
rDS
600
6
4
0.1 pA
0
15 30
VDG Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
2
VGS(off) = 1.5 V
VDS = 10 V
f = 1 kHz
1.6
TA = 55_C
1.2
25_C
0.8
300
0
0
400
360
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
1 2 3 4
VGS(off) Gate-Source Cutoff Voltage (V)
Output Characteristics
2
0
5
VGS(off) = 0.7 V
VGS = 0 V
240 0.1 V
160 0.2 V
0.3 V
80
0.5 V
0.4 V
0
0
4 8 12 16
VDS Drain-Source Voltage (V)
20
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
0.4 125_C
0
0.01
2
1.6
1.2
0.8
0.4
0.1
ID Drain Current (mA)
Output Characteristics
1
VGS(off) = 1.5 V
VGS = 0 V
0.3 V
1.2 V
0.6 V
0.9 V
0
0
4 8 12 16
VDS Drain-Source Voltage (V)
20
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J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
500
VGS(off) = 0.7 V
VDS = 10 V
400
300 TA = 55_C
25_C
200
Transfer Characteristics
2
VGS(off) = 1.5 V
VDS = 10 V
1.6
TA = 55_C
1.2
25_C
0.8
125_C
100
0.4 125_C
0
0
0.1
0.2
0.3
0.4
VGS Gate-Source Voltage (V)
0.5
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = 0.7 V
1.2
VDS = 10 V
f = 1 kHz
TA = 55_C
0.9 25_C
0.6
125_C
0.3
0
0
0.1
0.2
0.3
0.4
VGS Gate-Source Voltage (V)
0.5
Circuit Voltage Gain vs. Drain Current
200
160
AV
+
1
gfs RL
) RLgos
Assume VDD = 15 V, VDS = 5 V
10 V
120 RL + ID
0
0
0.4
0.8
1.2
1.6
2
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
4
VGS(off) = 1.5 V
3.2
VDS = 10 V
f = 1 kHz
2.4
TA = 55_C
25_C
1.6
0.8
0
0
2000
125_C
0.4
0.8
1.2
1.6
VGS Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2
1600
1200
VGS(off) = 0.7 V
80
VGS(off) = 0.7 V
1.5 V
40
0
0.01
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4
0.1
ID Drain Current (mA)
1
800
400
0
0.01
1.5 V
0.1
ID Drain Current (mA)
1
Document Number: 70233
S-40393—Rev. G, 15-Mar-04




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