IXTT1N450HV Datasheet PDF - IXYS

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IXTT1N450HV
IXYS

Part Number IXTT1N450HV
Description High Voltage Power MOSFET
Page 5 Pages


IXTT1N450HV datasheet pdf
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High Voltage
Power MOSFET
Preliminary Technical Information
IXTT1N450HV
VDSS
ID25
RDS(on)
= 4500V
= 1A
85Ω
N-Channel Enhancement Mode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Maximum Ratings
4500
4500
V
V
±20 V
±30 V
1A
3A
520 W
- 55 ... +150
150
- 55 ... +150http://www.DataSheet4U.com/
300
260
°C
°C
°C
°C
°C
4g
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z High Blocking Voltage
z High Voltage Package
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = 3.6kV, VGS = 0V
VDS = 4.5kV
VDS = 3.6kV
TJ = 100°C
RDS(on)
VGS = 10V, ID = 50mA, Note 1
Characteristic Values
Min. Typ. Max.
3.5 6.0 V
±100 nA
10 μA
50 μA
25 μA
85 Ω
Applications
z High Voltage Power Supplies
z Capacitor Discharge Applications
z Pulse Circuits
z Laser and X-Ray Generation Systems
© 2013 IXYS CORPORATION, All Rights Reserved
DS100500A(04/13)



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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 50V, ID = 200mA, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi Gate Input Resistance
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 500V, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
RthJC
Characteristic Values
Min. Typ. Max.
0.28
0.46
S
1730
78
28
pF
pF
pF
21 Ω
34 ns
60 ns
58 ns
127 ns
40 nC
10 nC
20 nC
0.24 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 1A, VGS = 0V, Note 1
trr IF = 1A, -di/dt = 50A/μs, VR = 100V
Characteristic Values
Min. Typ. Max.
1A
http://www.DataSheet4U.com/
5A
2.0 V
1.75
μs
IXTT1N450HV
TO-268 (HV) Outline
PINS:
1 - Gate
2 - Source
3 - Drain
Note
1. Pulse test, t 300μs, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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IXTT1N450HV
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
8V
7V
6V
10 20 30 40 50 60 70 80
VDS - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
1.2 VGS = 10V
8V
1.0
0.8
0.6 7V
0.4
0.2
0.0
0
6.5V
6V
50 100 150 200 250 300
VDS - Volts
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = 10V
7V
6V
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.
Junction Temperature
2.6
VGS = 10V
2.2
1.8
1.4
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1.0
I D = 1A
I D = 0.5A
5V
20 40 60 80 100 120 140 160
VDS - Volts
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs.
Drain Current
2.2
Fig. 6. Maximum Drain Current vs.
Case Temperature
VGS = 10V
2.0
1.8
TJ = 125ºC
1.0
0.8
1.6 0.6
1.4
0.4
1.2
TJ = 25ºC
0.2
1.0
0.8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
ID - Amperes
0.0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved



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IXTT1N450HV
Fig. 7. Input Admittance
0.7
0.6
0.5
0.4
TJ = 125ºC
0.3
25ºC
- 40ºC
0.2
0.1
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
Fig. 8. Transconductance
1.2
TJ = - 40ºC
1.0
0.8 25ºC
125ºC
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.0
2.5
2.0
1.5 TJ = 125ºC
1.0 TJ = 25ºC
10
9
8
7
6
5
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4
3
VDS = 1000V
I D = 500mA
I G = 1mA
Fig. 10. Gate Charge
2
0.5
1
0.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VSD - Volts
0
0 5 10 15 20 25 30 35 40 45
QG - NanoCoulombs
10,000
f = 1 MHz
Fig. 11. Capacitance
Fig. 12. Maximum Transient Thermal Impedance
1
1,000
100
Ciss
Coss
0.1
10
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.0001
0.001
0.01 0.1
Pulse Width - Seconds
1
10



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