IXGH48N60C3C1 Datasheet PDF - IXYS

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IXGH48N60C3C1
IXYS

Part Number IXGH48N60C3C1
Description GenX3 600V IGBT w/ SiC Anti-Parallel Diode
Page 6 Pages


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GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
High Speed PT IGBT for
40 - 100kHz Switching
Preliminary Technical Information
IXGH48N60C3C1
VCES
IC110
VCE(sat)
tfi(typ)
www.DataSheet4U.com
= 600V
= 48A
2.5V
= 38ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note 1
TJ =
125°C
Maximum Ratings
600
600
V
V
±20 V
±30 V
75 A
48 A
20 A
250 A
30 A
300 mJ
ICM = 100
@ < VCES
300
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
6
°C
°C
Nm/lb.in
g
Characteristic Values
Min.
Typ. Max.
3.0 5.5 V
50 μA
1.75 mA
±100 nA
2.3 2.5 V
1.8 V
TO-247
GC
E
G = Gate
E = Emitter
( TAB )
C = Collector
TAB = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Anti-Parallel Schottky Diode
z Fast Switching
z Avalanche Rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS100139A(06/09)



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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Cies
Coes
Cres
IC = 30A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Inductive Load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 3Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 3Ω
Note 2
RthJC
RthCS
Characteristic Values
Min. Typ.
Max.
20 30
2120
420
50
S
pF
pF
pF
77
16
32
19
25
0.33
60
38
0.23
100
0.42
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
19
28
0.37
92
95
0.57
0.21
ns
ns
mJ
ns
ns
mJ
0.42 °C/W
°C/W
IXGH48N60C3C1www.DataSheet4U.com
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20
L 19.81
L1
P 3.55
Q 5.89
R 4.32
5.72
20.32
4.50
3.65
6.40
5.49
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
Reverse Diode (SiC)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 20A, VGE = 0V, Note 1
RthJC
Characteristic Values
Min. Typ.
Max.
TJ = 125°C
1.65
1.80
2.10 V
V
0.90 °C/W
Notes
1. Pulse test, t 300μs, duty c ycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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Fig. 1. Output Characteristics
@ 25ºC
60
VGE = 15V
13V
50 11V
40
9V
30
20
10
7V
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
60
VGE = 15V
13V
50 11V
40
9V
30
20
7V
10
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
5.0
TJ = 25ºC
4.5
4.0
I C = 60A
30A
3.5 15A
3.0
2.5
2.0
7 8 9 10 11 12 13 14 15
VGE - Volts
IXGH48N60C3C1www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25ºC
300
250 VGE = 15V
13V
200
150 11V
100
9V
50
7V
0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.2
1.1 VGE = 15V
I C = 60A
1.0
0.9
0.8 I C = 30A
0.7
0.6
0.5
25
I C = 15A
50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Input Admittance
100
90
80
70
60
TJ = 125ºC
50 25ºC
- 40ºC
40
30
20
10
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved



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IXGH48N60C3C1www.DataSheet4U.com
Fig. 7. Transconductance
50
45 TJ = - 40ºC
40
35 25ºC
30 125ºC
25
20
15
10
5
0
0 10 20 30 40 50 60 70 80 90 100 110 120
IC - Amperes
16
14 VCE = 300V
I C = 30A
12 I G = 10 mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80
QG - NanoCoulombs
10,000
f = 1 MHz
1,000
100
10
0
5 10
1.00
Fig. 9. Capacitance
Cies
Coes
Cres
15 20 25 30 35 40
VCE - Volts
110
100
90
80
70
60
50
40
30
20
10
0
200
Fig. 10. Reverse-Bias Safe Operating Area
TJ = 125ºC
RG = 3
dV / dt < 10V / ns
250 300 350 400 450 500 550 600
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
650
0.10
0.01
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
0.1
1 10
IXYS REF: G_48N60C3C1(5D)6-04-09



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IXGH48N60C3C1 GenX3 600V IGBT w/ SiC Anti-Parallel Diode IXGH48N60C3C1
IXYS
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