IXGH39N60B Datasheet PDF - IXYS Corporation

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IXGH39N60B
IXYS Corporation

Part Number IXGH39N60B
Description HiPerFAST IGBT
Page 5 Pages


IXGH39N60B datasheet pdf
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HiPerFASTTM IGBT
IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
V
CES
IC25
VCE(sat)
tfi
= 600 V
= 76 A
= 1.7 V
= 200 ns
Preliminary data
www.DataSheet4US.cyommbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 22
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3) TO-247
(D1)
Maximum Ratings
600 V
600 V
±20 V
±30 V
76 A
39 A
152 A
ICM = 76
@ 0.8 VCES
200
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VGE = 0 V
IC = 750 µA
IC = 250 µA, VCE = VGE
IC = 500 µA
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
TJ = 125°C
VCE = 0 V, VGE = ±20 V
IC = I90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
39N60B
600
39N60BD1 600
V
39N60B
2.5
39N60BD1 2.5
5.0 V
5.0 V
39N60B
39N60B
39N60BD1
200 µA
1 mA
3 mA
±100 nA
1.7 V
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
z International standard packages
JEDEC TO-247 AD & TO-268
z High current handling capability
z Newest generation HDMOSTM process
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2003 IXYS All rights reserved
DS97548A(02/03)



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IXGH39N60B IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
gfs IC = IC90; VCE = 10 V,
19 28
Pulse test, t 300 µs, duty cycle 2 %
Cies 2750
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60B 200
39N60BD1 240
Cres
50
QG
www.DataSQhGeEet4U.com
QGC
td(on)
tri
td(off)
tfi
Eoff
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
110
25
40
25
30
250
200
4.0
td(on)
tri
Eon
td(off)
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may
tfi increase for VCE (Clamp) > 0.8 • VCES,
Eoff higher TJ or increased RG
25
30
0.3
360
350
6.0
RthJC
RthCK
0.25
S
pF
pF
pF
pF
150 nC
35 nC
75 nC
ns
ns
500 ns
360 ns
6.0 mJ
ns
ns
mJ
ns
ns
mJ
0.62 K/W
K/W
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = IC90, VGE = 0 V, Pulse test
t 300 µs, duty cycle d 2 %
TJ =150°C
TJ = 25°C
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs
VR = 100 V
TJ = 100°C
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C
6
100
25
1.6 V
2.5 V
A
ns
ns
0.9 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025



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Fig. 1. Saturation Voltage
Characteristics @ 25 Deg. C
40
35
30
25
20
15
10
www.DataSheet4U.com 5
0
0.4
VGE=15V
13V
11V
9V
7V
5V
0.8 1.2 1.6
VCE - Volts
2
2.4
Fig. 3. Saturation Voltage
Characteristics @ 125 Deg. C
100
VGE=15V
80 13V
11V
9V
60
7V
40
20
5V
0
01 23 45
VCE - Volts
Fig. 5. BVCES & V(GE)TH vs. Junction
Temperature
1.2
1.1 VGE(TH)
BV CES
1
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
© 2003 IXYS All rights reserved
IXGH39N60B IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
160
140
120
100
80
60
40
20
0
0
Fig. 2. Extended Output
Characteristics @ 25 Deg. C
VGE=15V
13V
11V
9V
7V
5V
1234
VCE - Volts
5
Fig. 4. Temperature Dependence of
VCE(SAT)
1.45
1.3 IC=78A
1.15
1
IC=39A
0.85
IC=19.5A
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Admittance
100
80
60
40 TJ= 125°C
25°C
20 -40°C
0
4567
VGE - Volts
8
9



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IXGH39N60B IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
Fig. 7. Transconductance
50
TJ = -40ºC
40 25ºC
125º C
30
20
10
www.DataSheet4U.com
0
0
20 40 60 80 100 120
IC - Amperes
Fig. 9. Dependence of EOFF on RG
16
14
12
10 TJ = 125ºC
VGE = 15V
8 VCE = 480V
6
4
IC = 78A
IC = 39A
2 IC = 19.5A
0
0 10 20 30 40 50
RG - Ohm s
60
Fig. 8. Dependence of EOFF on IC
16
14 TJ = 125ºC
VGE = 15V
12 VCE = 480V
10
RG = 56 Ohms
8 RG = 5 Ohms
6
4
2
10
30 50 70
IC - Amperes
90
Fig. 10. Dependence of EOFF on
Temperature
18
Solid lines - RG = 5 Ohms
15 Dashed lines - RG = 56 Ohms
VGE = 15V
12 VCE = 480V
IC =
78A
9
IC =
6 39A
3 IC =
19.5A
0
0 25 50 75 100 125 150
TJ - Degrees Centigrades
Fig. 11. Gate Charge
15
12
V CE=300V
IC=20A
9 IG=10mA
6
Fig. 12. Transient Thermal Response
1
0.1
3
0
0 20 40 60 80 100 120
QG - nanocoulombs
0.01
1
10 100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025



IXGH39N60B datasheet pdf
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IXGH39N60B pdf
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