IXGH38N60U1 Datasheet PDF - IXYS Corporation

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IXGH38N60U1
IXYS Corporation

Part Number IXGH38N60U1
Description Ultra-Low VCE(sat) IGBT
Page 2 Pages


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Ultra-Low VCE(sat)
IGBT with Diode
Combi Pack
IXGH 38N60U1
VCES
I
C25
VCE(sat)
= 600 V
= 76 A
= 1.8 V
www.DataSheetS4Uym.cobmol
Test Conditions
VCES
V
CGR
VGES
V
GEM
IC25
IC90
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10
Clamped inductive load, L = 100 µH
P
C
TJ
TJM
T
stg
Md
Weight
T
C
= 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
76 A
38 A
152 A
ICM = 76
@ 0.8 VCES
200
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l International standard package
JEDEC TO-247 AD
l IGBT and anti-parallel FRED in one
package
l 2nd generation HDMOSTM process
l Low V
CE(sat)
- for minimum on-state conduction
losses
l MOS Gate turn-on
- drive simplicity
l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Symbol
BV
CES
VGE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
750
µA,
V
GE
=
0
V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C C90 GE
TJ = 25°C
T
J
=
125°C
600
2.5
V
5.5 V
500 µA
8 mA
±100 nA
1.8 V
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Space savings (two devices in one
package)
l Easy to mount with 1 screw
(isolated mounting screw hole)
l Reduces assembly time and cost
l High power density
© 1996 IXYS All rights reserved
94528B (3/96)



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IXGH 38N60U1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
www.DaQtagSeheet4U.comIC = IC90, VGE = 15 V, VCE = 0.5 VCES
Q
gc
t
d(on)
tri
td(off)
t
fi
Eoff
Inductive load, TJ = 25°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
µH,
VCE = 0.8 VCES, RG = Roff = 10
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
td(on)
tri
Eon
t
d(off)
tfi
Eoff
Inductive
load,
T
J
=
125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 10
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
RthJC
R
thCK
15 20
S
2500
270
70
pF
pF
pF
125 150 nC
23 35 nC
50 75 nC
30 ns
150 ns
600 1200 ns
500 700 ns
9 15 mJ
40
160
1
800
1000
15
ns
ns
mJ
ns
ns
mJ
0.62 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
I
RM
trr
RthJC
IF = IC90, VGE = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
I
F
=
I,
C90
V
GE
=
0
V,
-di /dt
F
=
240
A/µs
VR = 360 V
TJ = 125°C
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C
10
150
35
1.6 V
15 A
ns
50 ns
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025



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IXYS Corporation
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