IXGH32N170A Datasheet PDF - IXYS


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IXGH32N170A
IXYS

Part Number IXGH32N170A
Description High Voltage IGBT
Page 5 Pages

IXGH32N170A datasheet pdf
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High Voltage
IGBT
IXGH 32N170A
IXGT 32N170A
VCES
IC25
VCE(sat)
tfi(typ)
= 1700 V
= 32 A
= 5.0 V
= 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
1700
1700
±20
±30
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
32
21
110
VGE = 15 V, TVJ = 125°C, RG = 5
Clamped inductive load
ICM = 70
@ 0.8 VCES
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10
10
V
V
V
V
A
A
A
A
µs
PC TC = 25°C
TJ
TJM
Tstg
350
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
Md Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
300
6
4
°C
g
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
1700
3.0
V
5.0 V
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
Note 1 TJ = 125°C
50 µA
2 mA
VCE = 0 V, VGE = ±20 V
±100 nA
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
4.0 5.0 V
4.8 V
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
Features
z International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2004 IXYS All rights reserved
DS98942D(09/04)



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Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = I90; VCE = 10 V
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
16 26
3700
180
43
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
Note 3
155 nC
28 nC
49 nC
46 ns
57 ns
260 500 ns
50 100 ns
1.5 2.6 mJ
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
Note 3
(TO-247)
48 ns
59 ns
4.0 mJ
300 ns
70 ns
2.4 mJ
0.35 K/W
0.25
K/W
IXGH 32N170A
IXGT 32N170A
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t 300 µs, duty cycle 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161



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Fig. 1. Output Characteristics
@ 25 Deg. C
60
VGE = 17V
50
15V
13V
11V
9V
40
30
20
7V
10
0
0
60
50
40
30
20
12345678
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
VGE = 17V
15V
13V
11V
9V
7V
9
10
0
0 1 2 3 4 5 6 7 8 9 10
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em iiter voltage
10
9 TJ = 25ºC
8
7
6
5 IC = 42A
4 21A
3
10.5A
2
6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2004 IXYS All rights reserved
IXGH 32N170A
IXGT 32N170A
Fig. 2. Extended Output Characteristics
@ 25 deg. C
180
160
VGE = 17V
15V
140 13V
120
11V
100
80 9V
60
40
20
7V
0
0 2 4 6 8 10 12 14 16 18 20
VC E - Volts
Fig. 4. De pendence of VCE(sat) on
Tem perature
1.8
VGE = 15V
1.6
IC = 42A
1.4
1.2
IC = 21A
1
0.8
0.6
-50
-25
IC = 10.5A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
80
70
60
50
40
30
20
TJ = 125ºC
25ºC
10 -40ºC
0
456 78
VG E - Volts
9



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IXGH 32N170A
IXGT 32N170A
Fig. 7. Transconductance
45
40
35 TJ = -40ºC
30 25ºC
125ºC
25
20
15
10
5
0
0 10 20 30 40 50 60 70 80
I C - Amperes
Fig. 9. Dependence of Eoff on Ic
6
RG = 3
5 RG= 15- - - - -
VGE = 15V
4 VCE = 850V
3 TJ = 125ºC
2
TJ = 25ºC
1
0
16 24 32 40 48 56 64
I C - Amperes
Fig. 11. Gate Charge
15
VCE = 850V
IC= 21A
12 IG= 10mA
9
6
3
Fig. 8. Dependence of Eoff on RG
8
TJ = 125ºC
7 VGE = 15V
VCE = 850V
6 IC = 64A
5
4 IC = 32A
3
2 IC = 16A
1
0 5 10 15 20 25
R G - Ohms
Fig. 10. Dependence of Eoff on
Tem perature
7
RG = 3
6 RG = 15- - - - -
VGE = 15V
5 VCE = 850V
IC = 64A
4
30
3
IC = 32A
2
1 IC = 16A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
Fig. 12. Capacitance
f = 1 MHz
1000
Cies
Coes
100
Cres
0 10
0 30 60 90 120 150
Q G - nanoCoulombs
0 5 10 15 20 25 30 35 40
VC E - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692




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