IXGH32N170 Datasheet PDF - IXYS Corporation

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IXGH32N170
IXYS Corporation

Part Number IXGH32N170
Description High Voltage IGBT
Page 5 Pages


IXGH32N170 datasheet pdf
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High Voltage
IGBT
Preliminary Data Sheet
IXGH 32N170
IXGT 32N170
VCES
IC25
VCE(sat)
tfi(typ)
= 1700 V
= 75 A
= 3.3 V
= 250 ns
Symbol
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VCES
VCGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Maximum Ratings
1700
1700
V
V
VGES
VGEM
Continuous
Transient
±20 V
±30 V
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1 ms
75 A
32 A
200 A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5
Clamped inductive load
ICM = 90
@ 0.8 VCES
A
PC TC = 25°C
350 W
TJ
-55 ... +150
°C
TJM 150 °C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
°C
°C
Md
Weight
Mounting torque (M3)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
C (TAB)
z International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
1700
3.0
V
5.0 V
50 µA
1 mA
±100 nA
2.5 3.3 V
3.0 V
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS98941B(11/03)



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Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
IC(ON)
VGE = 10V, VCE = 10V
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
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Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7
RthJC
RthCK
(TO-247)
22 30
S
120 A
3500
165
40
pF
pF
pF
155 nC
30 nC
51 nC
45 ns
38 ns
270 500 ns
250 500 ns
11 20 mJ
48 ns
42 ns
6.0 mJ
360 ns
560 ns
14 mJ
0.35 K/W
0.25
K/W
IXGH 32N170
IXGT 32N170
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505



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Fig. 1. Output Characte ristics
@ 25 Deg. C
64
VGE = 17V
56 15V
13V
48 11V
9V
40
32
24
16
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8
7V
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
64
VGE = 17V
56 15V
13V
48
11V
9V
40
32
24
7V
16
8
0
0123456
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs . Gate-to-Em iiter voltage
8
7 TJ = 25ºC
6
5
4 IC = 64A
3 32A
2 16A
1
6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2003 IXYS All rights reserved
IXGH 32N170
IXGT 32N170
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
240
210
VGE = 17V
15V
180 13V
150
11V
120
90
9V
60
30 7V
0
0 2 4 6 8 10 12 14
VC E - Volts
Fig. 4. De pende nce of VCE(sat) on
Tem perature
1.8
VGE = 15V
1.6
IC = 64A
1.4
1.2
IC = 32A
1
0.8
0.6
-50
-25
IC = 16A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
100
90
80
70
60
50
40
30
20
10
0
5
Fig. 6. Input Adm ittance
TJ = 125ºC
25ºC
-40ºC
67 8
VG E - Volts
9
10



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IXGH 32N170
IXGT 32N170
Fig. 7. Transconductance
45
40
35 TJ = -40ºC
25ºC
30 125ºC
25
20
15
10
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5
0
0 16 32 48 64 80
I C - Amperes
96
Fig. 9. Dependence of Eoff on Ic
22
RG = 3
20 RG= 15- - - - -
18 VGE = 15V
VCE = 1020V
TJ = 125ºC
16
14
12 TJ = 25ºC
10
8
16 24 32 40 48 56 64
I C - Amperes
Fig. 11. Gate Charge
15
VCE = 850V
IC= 32A
12 IG= 10mA
9
6
3
Fig. 8. Dependence of Eoff on RG
25
TJ = 125ºC
23 VGE = 15V
VCE = 1020V
21
IC = 64A
19
17
15 IC = 32A
13
11
0
IC = 16A
10 20 30
R G - Ohms
40
Fig. 10. Dependence of Eoff on
Tem perature
22
RG = 3
20 RG = 15- - - - -
VGE = 15V
18 VCE = 1020V
IC = 64A
50
16
14 IC = 32A
12
10 IC = 16A
8
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
Fig. 12. Capacitance
f = 1 MHz
1000
Cies
Coes
100
Cres
0
0 30 60 90 120 150
Q G - nanoCoulombs
10
0
5 10 15 20 25 30 35 40
VC E - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505



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