IXGH30N60BU1 Datasheet PDF - IXYS Corporation

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IXGH30N60BU1
IXYS Corporation

Part Number IXGH30N60BU1
Description HiPerFAST IGBT
Page 5 Pages


IXGH30N60BU1 datasheet pdf
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HiPerFASTTM IGBT
with Diode
Combi Pack
IXGH 30N60BU1
IXGT 30N60BU1
VCES = 600 V
IC25 = 60 A
VCE(sat) = 1.8 V
tfi = 100 ns
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Symbol
Test Conditions
Maximum Ratings
VCES
V
CGR
VGES
VGEM
I
C25
IC110
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
T
C
= 25°C
TC = 110°C
T
C
= 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 33
Clamped inductive load, L = 100 µH
PC TC = 25°C
TJ
TJM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque, TO-247 AD
TO-268
TO-247 AD
600
600
±20
±30
60
30
120
ICM = 60
@ 0.8 VCES
200
-55 ... +150
150
-55 ... +150
300
1.13/10
4
6
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-268
(IXGT)
G
E
TO-247 AD
C (TAB)
G
C
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
Ÿ International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
Ÿ High frequency IGBT and antiparallel
FRED in one package
Ÿ High current handling capability
Ÿ Newest generation HDMOSTM
process
Ÿ MOS Gate turn-on
- drive simplicity
Symbol
BVCES
V
GE(th)
ICES
I
GES
VCE(sat)
VCE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 750µA, VGE = 0 V
BVCES temperature coefficient
I
C
=
250
µA,
V
CE
=
V
GE
VGE(th) temperature coefficient
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 150°C
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC110, VGE = 15 V
IC = IC110, VGE = 15 V
TJ = 150°C
600
0.072
2.5
-0.286
V
%/K
5.5 V
%/K
500 µA
3 mA
±100 nA
1.8 V
2.0 V
Applications
Ÿ AC motor speed control
Ÿ DC servo and robot drives
Ÿ DC choppers
Ÿ Uninterruptible power supplies (UPS)
Ÿ Switched-mode and resonant-mode
power supplies
Advantages
Ÿ Space savings (two devices in one
package)
Ÿ High power density
Ÿ Optimized VCE(sat) and switching
speeds for medium frequency
applications
© 2002 IXYS All rights reserved
97501E (02/02)



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Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g I = I ; V = 10 V,
fs C C110 CE
Pulse test, t 300 µs, duty cycle 2 %
25 S
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Q
g
Qge
Q
gc
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tri
td(off)
tfi
Eoff
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I
C
=
I,
C110
V
GE
=
15
V,
L
=
100
µH,
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
td(on) Inductive load, TJ = 150°C
t
ri
IC = IC110, VGE = 15 V, L = 100 µH
Eon VCE = 0.8 VCES, RG = Roff = 4.7
td(off) Remarks: Switching times may
tfi increase for VCE (Clamp) > 0.8 • VCES,
Eoff higher TJ or increased RG
2710
240
50
110
22
40
25
30
130
100
1.0
25
35
1
200
230
2.5
pF
pF
pF
150 nC
35 nC
75 nC
ns
ns
220 ns
190 ns
2.0 mJ
ns
ns
mJ
ns
ns
mJ
RthJC
RthCK
0.62 K/W
0.25
K/W
IXGH 30N60BU1
IXGT 30N60BU1
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-247 AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V I = I , V = 0 V,
F F C110 GE
Pulse test, t 300 µs, duty cycle d 2 %
1.6 V
IRM
trr
R
thJC
IF = IC110, VGE = 0 V, -diF/dt = 240 A/µs
VR = 360 V
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
10 15 A
35 50 ns
1 K/W
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025



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Fig. 1. Saturation Voltage Characteristics
100
TJ = 25°C
80
60
VGE = 15V
13V
11V
9V
7V
40
20
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0
0
5V
1234
VCE - Volts
5
Fig. 3. Saturation Voltage Characteristics
100
TJ = 150°C VGE = 15V
80
13V
11V
9V
60
7V
40
20
5V
0
012345
VCE - Volts
Fig. 5. Admittance Curves
100
VCE = 10V
80
60
40
20
0
3
TJ = 150°C
TJ = 25°C
45678
VGE - Volts
9 10
© 2002 IXYS All rights reserved
IXGH 30N60BU1
IXGT 30N60BU1
Fig. 2. Extended Output Characteristics
200
TJ = 25°C VGE = 15V
13V
160
11V
9V
120
80
7V
40
5V
0
0 2 4 6 8 10
VCE - Volts
Fig. 4. Temperature Dependence of VCE(sat)
1.6
VGE = 15V
1.4
IC = 60A
1.2
IC = 30A
1.0
0.8
0.6
25
IC = 15A
50 75 100 125
TJ - Degrees C
150
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
10000
f = 1Mhz
1000
Ciss
Coss
100
Crss
10
0 5 10 15 20 25 30 35 40
VCE-Volts



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Fig. 7. Dependence of EOFF and EOFF on IC.
48
TJ = 150°C
RG = 4.7
36
E(OFF)
24
E(ON)
12
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0
0
20 40 60
IC - Amperes
0
80
IXGH 30N60BU1
IXGT 30N60BU1
Fig. 8. Dependence of EOFF on RG.
10
TJ = 150°C
8
IC = 60A
6
4
IC = 30A
2
IC = 15A
0
0 10 20 30 40 50 60
RG - Ohms
Fig. 9. Gate Charge
18
IC = 30A
15 VCE = 360V
12
9
6
3
0
0 25 50 75 100 125 150 175
Qg - nanocoulombs
Fig. 10. Turn-off Safe Operating Area
100
60
10 TJ = 150°C
RG = 4.7
dV/dt < 5V/ns
1
0.1
0
100 200 300 400 500 600
VCE - Volts
Fig. 11. IGBT Transient Thermal Resistance
1
D=0.5
D=0.2
0.1 D=0.1
D=0.05
D=0.02
D=0.01
0.01
D = Duty Cycle
Single pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
0.1
1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025



IXGH30N60BU1 datasheet pdf
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IXGH30N60BU1 pdf
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IXGH30N60BU1 HiPerFAST IGBT IXGH30N60BU1
IXYS Corporation
IXGH30N60BU1 pdf

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