IXGH30N60 Datasheet PDF - IXYS Corporation

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IXGH30N60
IXYS Corporation

Part Number IXGH30N60
Description Low VCE(sat) IGBT
Page 2 Pages


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Low VCE(sat) IGBT
High speed IGBT
IXGH/IXGM 30 N60
IXGH/IXGM 30 N60A
VCES
600 V
600 V
IC25
50 A
50 A
VCE(sat)
2.5 V
3.0 V
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Test Conditions
Maximum Ratings
VCES
V
CGR
VGES
V
GEM
IC25
IC90
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 33
Clamped inductive load, L = 100 µH
P
C
TJ
TJM
T
stg
Md
Weight
T
C
= 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600 V
600 V
±20 V
±30 V
50 A
30 A
100 A
ICM = 60
@ 0.8 VCES
200
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
BV
CES
VGE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
250
µA,
V
GE
=
0
V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C C90 GE
TJ = 25°C
T
J
=
125°C
30N60
30N60A
600
2.5
V
5V
200 µA
1 mA
±100 nA
2.5 V
3.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
l International standard packages
l 2nd generation HDMOSTM process
l Low V
CE(sat)
- for low on-state conduction losses
l High current handling capability
l MOS Gate turn-on
- drive simplicity
l Voltage rating guaranteed at high
temperature (125°C)
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l High power density
© 1996 IXYS All rights reserved
91512E (3/96)



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IXGH 30N60 IXGM 30N60
IXGH 30N60A IXGM 30N60A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
Cies
Coes
Cres
Qg
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Qgc
td(on)
tri
t
d(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 33
Switching times may increase
for VCE (Clamp) > 0.8 • VCES, 30N60A
higher TJ or increased RG 30N60A
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
L = 300 µH
VCE = 0.8 VCES,
RG = Roff = 33
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • V , higher
CES
TJ or increased RG
30N60
30N60A
30N60
30N60A
8 16
S
2800
230
70
pF
pF
pF
150 180 nC
35 50 nC
60 90 nC
100 ns
200 ns
500 ns
200 ns
2 mJ
100 ns
200 ns
3 mJ
600 1000 ns
500 1500 ns
250 800 ns
5.5 mJ
4.0 mJ
0.62 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
IXGH 30N60 and IXGH 30N60A characteristic curves are located on the
IXGH 30N60U1 and IXGH 30N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025



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