IXGA30N60C3C1 Datasheet PDF - IXYS

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IXGA30N60C3C1
IXYS

Part Number IXGA30N60C3C1
Description GenX3 600V IGBT w/ SiC Anti-Parallel Diode
Page 7 Pages


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GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
High Speed PT IGBTs for
40 - 100kHz Switching
Preliminary Technical Information
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
VCES = 600V
IC110 = 30A
VCE(sat)
tfi(typ)
=
3.0V
47ns
TO-263 (IXGA)
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
110°C
110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
600
600
± 20
± 30
V
V
V
V
60
30
13
150
ICM = 60
@ VCES
220
A
A
A
A
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
2.5
3.0
6.0
°C
°C
Nm/lb.in.
g
g
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min.
Typ. Max.
3.5 5.5 V
25 μA
300 μA
±100 nA
2.6 3.0 V
1.8 V
© 2009 IXYS CORPORATION, All Rights Reserved
G
E
TO-220 (IXGP)
C (TAB)
GCE
C (TAB)
TO-247 (IXGH)
G
CE
G = Gate
E = Emitter
C (TAB)
C = Collector
TAB = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Schottky Diode
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100142A(06/09)



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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 20A, VCE = 10V, Note 1
Cies
Coes VCE = 25V, VGE = 0V, f = 1MHz
Cres
Qg
Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
RthJC
RthCS
TO-220
TO-247
IXGA30N60C3C1
Characteristic Values
Min. Typ. Max.
9 16
S
1075
196
29
pF
pF
pF
38 nC
8 nC
17 nC
17 ns
20 ns
0.12 mJ
42 75 ns
47 ns
0.09 0.18 mJ
16 ns
21 ns
0.16 mJ
70 ns
90 ns
0.33 mJ
0.56 °C/W
0.50 °C/W
0.21 °C/W
IXGwPw3w.0DaNtaS6he0et4CU.3comC1
IXGH30N60C3C1
Reverse Diode (SiC)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF IF = 10A, VGE = 0V, Note 1
RthJC
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1.65 2.10 V
1.80 V
1.10 °C/W
Notes
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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TO-263 (IXGA) Outline
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
TO-220 (IXGP) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-247 (IXTH) Outline
123
P
e
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
© 2009 IXYS CORPORATION, All Rights Reserved



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IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fig. 1. Output Characteristics
@ 25ºC
40
VGE = 15V
35 13V
30
11V
25
20
9V
15
10
5 7V
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
VCE - Volts
180
160
140
120
100
80
60
40
20
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
40
VGE = 15V
35 13V
11V
30
25 9V
20
15
10
5 7V
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VCE - Volts
1.1
1.0
0.9
0.8
0.7
0.6
0.5
25
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
I C = 40A
VGE = 15V
I C = 20A
I C = 10A
50 75 100 125
TJ - Degrees Centigrade
150
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
5.5
TJ = 25ºC
5.0
4.5
I C = 40A
4.0
20A
3.5
10A
3.0
70
60
50
40
30
20
10
Fig. 6. Input Admittance
TJ = 125ºC
25ºC
- 40ºC
2.5 0
7 8 9 10 11 12 13 14 15
5 6 7 8 9 10 11
VGE - Volts
VGE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.



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IXYS
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