IXFX320N17T2 Datasheet PDF - IXYS

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IXFX320N17T2
IXYS

Part Number IXFX320N17T2
Description GigaMOS TrenchT2 HiperFET Power MOSFET
Page 6 Pages


IXFX320N17T2 datasheet pdf
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Advance Technical Information
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GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK320N17T2
IXFX320N17T2
VDSS =
ID25 =
RDS(on)
trr
170V
320A
5.2mΩ
150ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
dV/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
170
170
V
V
± 20 V
± 30 V
320 A
160 A
800 A
100 A
5J
1670
W
20 V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min. Typ. Max.
170 V
2.5 5.0 V
± 200 nA
50 μA
5 mA
5.2 mΩ
G
D
S
PLUS247 (IXFX)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Synchronous Recification
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100188(09/09)



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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1
120 190
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
45
2890
410
nF
pF
pF
RGi Gate Input Resistance
1.96 Ω
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
46
170
115
230
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
640
185
175
nC
nC
nC
RthJC
RthCS
0.09 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 100A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 160A, -di/dt = 100A/μs
VR = 60V, VGS = 0V
Characteristic Values
Min. Typ. Max.
320 A
1280 A
1.25 V
150 ns
0.53 μC
9.00 A
IXwFwwK.D3at2aSh0eeNt4U1.c7omT2
IXFX320N17T2
TO-264 (IXFK) Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
0.25
20.83
2.59
3.17 3.66
6.07
8.38
3.81
1.78
6.27
8.69
4.32
2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.010
.820
.102
.125 .144
.239
.330
.150
.070
.247
.342
.170
.090
.238 .248
.062 .072
PLUS 247TM (IXFX) Outline
Note 1. Pulse test, t 300μs; duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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Fig. 1. Output Characteristics
@ TJ = 25ºC
320
VGS = 15V
280 10V
8V
240 7V
200 6V
160
120
5.5V
80
40 5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VDS - Volts
Fig. 3. Output Characteristics
@ TJ = 150ºC
320
VGS = 15V
280 10V
7V
240
200 6V
160
120
5V
80
40 4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 160A Value vs.
Drain Current
3.4
VGS = 10V
3.0
2.6 TJ = 175ºC
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
50 100 150 200 250 300 350 400
ID - Amperes
IXwFwwK.D3ata2Sh0eeNt4U1.co7mT2
IXFX320N17T2
Fig. 2. Extended Output Characteristics
400
VGS = 15V
350 10V
7V
@ TJ = 25ºC
300
6V
250
200
150 5.5V
100
50 5V
0
0123456
VDS - Volts
7
Fig. 4. RDS(on) Normalized to ID = 160A Value vs.
Junction Temperature
3.4
VGS = 10V
3.0
2.6
I D = 320A
2.2
1.8 I D = 160A
1.4
1.0
0.6
0.2
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
180
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
-25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved



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IXwFwwK.D3ata2Sh0eeNt4U1.c7omT2
IXFX320N17T2
200
180
160
140
120
100
80
60
40
20
0
3.0
Fig. 7. Input Admittance
TJ = 150ºC
25ºC
- 40ºC
3.5 4.0 4.5 5.0 5.5 6.0
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
400
350
300
250
200
150
TJ = 150ºC
100
TJ = 25ºC
50
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD - Volts
400
350
300
250
200
150
100
50
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
150ºC
20 40 60 80 100 120 140 160 180 200
ID - Amperes
10
9 VDS = 85V
I D = 160A
8 I G = 10mA
7
Fig. 10. Gate Charge
6
5
4
3
2
1
0
0 100 200 300 400 500 600 700
QG - NanoCoulombs
100.0
10.0
Fig. 11. Capacitance
Ciss
1,000.0
100.0
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
External Lead Limit
25µs
100µs
Coss
1.0
f = 1 MHz
Crss
0.1
0
5 10 15 20 25 30 35 40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10.0
1.0
0.1
1
TJ = 175ºC
TC = 25ºC
Single Pulse
1ms
10ms
100ms
DC
10 100
VDS - Volts
1,000
IXYS REF:F_320N17T2(9V)9-02-09



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