IXFX230N20T Datasheet PDF - IXYS

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IXFX230N20T
IXYS

Part Number IXFX230N20T
Description GigaMOS Power MOSFET
Page 5 Pages


IXFX230N20T datasheet pdf
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Advance Technical Information
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GigaMOSTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK230N20T
IXFX230N20T
VDSS =
ID25 =
RDS(on)
trr
200V
230A
7.5m
200ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1M
Continuous
Transient
TC = 25°C
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
200
200
V
V
± 20 V
± 30 V
230 A
160 A
630 A
100 A
3J
20 V/ns
1670
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min. Typ. Max.
200 V
2.5 5.0 V
± 200 nA
50 µA
3 mA
7.5 m
G
D
S
PLUS247 (IXFX)
(TAB)
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Synchronous Recification
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100133(03/09)



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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1
100 160
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
28
2540
310
nF
pF
pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1(External)
41
35
104
29
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
378
125
86
nC
nC
nC
RthJC
RthCS
0.09 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 60A, VGS = 0V, Note 1
trr
QRM
IF = 115A, -di/dt = 100A/µs
IRM VR = 75V, VGS = 0V
Characteristic Values
Min. Typ. Max.
230 A
920 A
1.3 V
200 ns
0.74 µC
10.6 A
wIXwwF.DKata2Sh3ee0t4UN.co2m0T
IXFX230N20T
TO-264 (IXFK) Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
PLUS 247TM (IXFX) Outline
Note 1: Pulse Test, t 300µs; Duty Cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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240
220
200
180
160
140
120
100
80
60
40
20
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 15V
10V
7V
6V
5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS - Volts
1.6
Fig. 3. Output Characteristics
@ 150ºC
240
220
VGS = 15V
10V
200 8V
7V
180
160 6V
140
120
100
80
60 5V
40
20
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 115A Value
vs. Drain Current
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
VGS = 10V
50 100
150 200
ID - Amperes
TJ = 175ºC
TJ = 25ºC
250 300 350
© 2009 IXYS CORPORATION, All Rights Reserved
IwXwwF.DKata2Sh3ee0t4UN.co2m0T
IXFX230N20T
Fig. 2. Extended Output Characteristics
@ 25ºC
350
300
VGS = 15V
10V
250
7V
200
150 6V
100
50
5V
0
0123456789
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 115A Value
vs. Junction Temperature
3.0
2.8 VGS = 10V
2.6
2.4
2.2 I D = 230A
2.0 I D = 115A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
180
External Lead Current Limit
160
140
120
100
80
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade



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wIXwwF.DKata2Sh3ee0t4UN.co2m0T
IXFX230N20T
200
180
160
140
120
100
80
60
40
20
0
3.0
350
300
250
200
150
100
50
0
0.0
Fig. 7. Input Admittance
TJ = 150ºC
25ºC
- 40ºC
3.5 4.0 4.5 5.0 5.5 6.0
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 150ºC
TJ = 25ºC
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Volts
6.5
1.4
Fig. 8. Transconductance
280
TJ = - 40ºC
240
200
25ºC
160
120 150ºC
80
40
0
0 20 40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 10. Gate Charge
10
9 VDS = 100V
I D = 115A
8 I G = 10mA
7
6
5
4
3
2
1
0
0 40 80 120 160 200 240 280 320 360 400
QG - NanoCoulombs
100,000
Fig. 11. Capacitance
f = 1 MHz
10,000
Ciss
1,000
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
25µs
1,000
Coss
100
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
10
1
TJ = 175ºC
TC = 25ºC
Single Pulse
10
VDS - Volts
100µs
1ms
100
1000
IXYS REF: F_230N20T(9E)3-25-09



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