IXFN200N07 Datasheet PDF - IXYS

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IXFN200N07
IXYS

Part Number IXFN200N07
Description HiPerFET Power MOSFETs
Page 4 Pages


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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
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IXFN 200 N06
IXFN 180 N07
IXFN 200 N07
VDSS
60 V
70 V
70 V
ID25
200 A
180 A
200 A
RDS(on)
6 mW
7 mW
6 mW
trr £ 250 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
N07 70 V
N06 60 V
N07 70 V
N06 60 V
VGS
V
GSM
ID25
IL(RMS)
Continuous
Transient
TC= 25°C; Chip capability
Terminal current limit
±20 V
±30 V
200N06/200N07 200 A
180N07
180 A
100 A
IDM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
VISOL
Md
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
50/60 Hz, RMS
IISOL £ 1 mA
Mounting torque
Terminal connection torque
t = 1 min
t=1s
600 A
100 A
30 mJ
2J
5 V/ns
520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
Weight
30 g
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V
DSS
VGS (th)
IGSS
IDSS
RDS(on)
V = 0 V, I = 1 mA
GS D
N06 60
N07 70
VDS = VGS, ID = 8 mA
2
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
T
J
=
125°C
TJ = 25°C
VGS = 10 V, ID = 0.5 • ID25
200N06/200N07
Pulse test, t £ 300 ms, duty cycle d £ 2 % 180N07
V
V
4V
±200 nA
400 mA
2 mA
6 mW
7 mW
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97533A (9/99)
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IXFN 200N06 IXFN 180N07wwIwX.DFataNShee2t40U.0coNm 07
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
60 80
9000
4000
2400
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
30
60
100
60
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
480
60
240
nC
nC
nC
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.24 K/W
0.05 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
I V =0V
S GS
200N06/200N07
180N07
200 A
180 A
ISM Repetitive; pulse width limited by TJM
V I = 100 A, V = 0 V,
SD F GS
Pulse test, t £ 300 ms, duty cycle d £ 2 %
600 A
1.7 V
trr
IF = 25 A
QRM -di/dt = 100 A/ms,
I VR = 50 V
RM
150 250
0.7
9
ns
mC
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFN 200N06 IXFN 180N07 wwIwX.DFataNShe2et40U0.coNm 07
175
TJ = 25OC
150
125
100
75
VGS=10V
9V
8V
7V
6V
5V
50
25
0
0.0 0.5 1.0 1.5
VDS - Volts
Figure 1. Output Characteristics at 25OC
2.0
600
500
400
300
200
VDS > 4RDS(ON)
TJ=25OC
TJ=150OC
TJ=100OC
100
0
2 4 6 8 10 12
VGS - Volts
Figure 3. Admittance Curves
1.4
TJ = 25oC
1.3
1.2
1.1 VGS = 10V
1.0 VGS = 15V
0.9
0.8
0
100 200 300 400 500 600
ID - Amperes
Figure 5. R normalized to 0.5 I value
DS(on)
D25
© 2000 IXYS All rights reserved
600
TJ=25OC
500
400
300
200
100
VGS=10V
9V
8V
7V
6V
5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
Figure 2. Extended Output Characteristics
80
70 VGS=10V
TJ = 25oC
60 TJ = 100oC
50
40
30 TJ = 150oC
20
10
0
0 100 200 300 400 500 600
IC - Amperes
Figure 4. Transconductance vs.
Drain Current
2.25
2.00
1.75
ID = 75A
VGS = 10V
1.50
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees C
Figure 6. Normalized R vs. Junction
DS(on)
Temperature
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IXFN 200N06 IXFN 180N07 wIwXwF.DaNtaSh2ee0t4U0.cNom07
16
14 VDS = 40V
12 ID = 38A
IG = 1mA
10
8
6
4
2
0
0 100 200 300 400 500 600 700
Gate Charge - nCoulombs
Figure 7. Gate Charge
12000
10000
8000
F = 1MHz
Ciss
6000
4000
2000
Coss
Crss
0
0 10 20 30
VDS - Volts
Figure 9. Capacitance Curves
40
100
250
IXFN200
200
IXFN180
150
(Terminal current limit)
100
50
0
-50 -25 0 25 50 75 100 125 150
Case Temperature - OC
Figure 8. Drain Current vs. Case
Temperature
400
TJ =150OC
300
200
100
TJ =150OC
TJ =25OC
TJ =100OC
0
0.0 0.5 1.0 1.5 2.0
VSD - Volts
Figure 10. Source-Drain Voltage vs. Source Current
10-1
10-2
10-3
10-2
Time - Seconds
Figure 11. Transient Thermal Resistance
10-1
© 2000 IXYS All rights reserved
100
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