IXFN180N25T Datasheet PDF - IXYS

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IXFN180N25T
IXYS

Part Number IXFN180N25T
Description GigaMOS Power MOSFET
Page 5 Pages


IXFN180N25T datasheet pdf
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Advance Technical Information
www.DataSheet4U.com
GigaMOSTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN180N25T
VDSS =
ID25 =
RDS(on)
trr
250V
155A
12.9m
200ns
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1M
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
250
250
V
V
±20 V
±30 V
164 A
500 A
40 A
3J
20 V/ns
900 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
250 V
2.5 5.0 V
±200 nA
50 µA
3 mA
12.9 m
© 2009 IXYS CORPORATION, All Rights Reserved
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z Isolation voltage 2500 V~
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS100130(03/09)



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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 90A
RG = 1(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 90A
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
100 160
S
28
2050
158
nF
pF
pF
37 ns
33 ns
100 ns
28 ns
345 nC
122 nC
70 nC
0.138 °C/W
0.05 °C/W
IXFN180N25Twww.DataSheet4U.com
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 60A, VGS = 0V, Note 1
trr
QRM
IF = 90A, VGS = 0V
-di/dt = 100A/µs
IRM VR = 75V
Characteristic Values
Min. Typ. Max.
180 A
720 A
1.3 V
200 ns
0.77 µC
11 A
Note 1: Pulse Test, t 300µs; Duty Cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



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IXFN180N25Twww.DataSheet4U.com
Fig. 1. Output Characteristics
@ 25ºC
180
VGS = 10V
160 8V
7V
140
120
100 6V
80
60
40
20 5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
180
VGS = 10V
160 7V
140
120 6V
100
80
60
40 5V
20
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 90A Value
vs. Drain Current
2.8
2.6 VGS = 10V
2.4
2.2
TJ = 125ºC
2.0
1.8
1.6
1.4
1.2
1.0 TJ = 25ºC
0.8
0.6
0
50 100 150 200 250 300 350
ID - Amperes
Fig. 2. Extended Output Characteristics
@ 25ºC
350
300
VGS = 10V
250 7V
200
150
6V
100
50
5V
0
0 2 4 6 8 10 12 14 16 18
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 90A Value
vs. Junction Temperature
2.8
2.6 VGS = 10V
2.4
2.2
2.0 I D = 180A
1.8
1.6 I D = 90A
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
180
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved



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IXFN180N25Twww.DataSheet4U.com
Fig. 7. Input Admittance
200
180
160
TJ = 125ºC
140 25ºC
- 40ºC
120
100
80
60
40
20
0
3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
250
200
150
100 TJ = 125ºC
TJ = 25ºC
50
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
Fig. 8. Transconductance
280
TJ = - 40ºC
240
200
25ºC
160
125ºC
120
80
40
0
0 20 40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 10. Gate Charge
10
9 VDS = 125V
I D = 90A
8 I G = 10mA
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350
QG - NanoCoulombs
100,000
10,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
1,000
100
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
25µs
1,000
Coss
Crss
100
0
5 10 15 20 25 30 35 40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100µs
10
TJ = 150ºC
TC = 25ºC
Single Pulse
1
1
1ms
10 100
VDS - Volts
1000
IXYS REF: F_180N25T (9E)03-23-09



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